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GS81302TT07GE-400

Description
SRAM 1.8 or 1.5V 16M x 8 144M
Categorystorage    storage   
File Size1MB,30 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
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GS81302TT07GE-400 Overview

SRAM 1.8 or 1.5V 16M x 8 144M

GS81302TT07GE-400 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time12 weeks
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE, LATE WRITE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density134217728 bit
Memory IC TypeDDR SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX8
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
GS81302TT07/10/19/37E-450/400/350/333/300
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.0 Clock Latency
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaDDR
TM
-II+
Burst of 2 SRAM
450 MHz–300 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
SigmaDDR™ Family Overview
me
nd
ed
for
-450
Ne
w
The GS81302TT07/10/19/37E are built in compliance with the
SigmaDDR-II+ SRAM pinout standard for Common I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
Parameter Synopsis
-400
-350
2.86 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
tKHKH
tKHQV
2.2 ns
2.5 ns
0.45 ns
0.45 ns
Rev: 1.00b 8/2017
No
t
Re
co
m
1/30
De
sig
n—
Di
sco
nt
inu
ed
Pr
od
u
SRAMs. The GS81302TT07/10/19/37E SigmaDDR-II+
SRAMs are just one element in a family of low power, low
voltage HSTL I/O SRAMs designed to operate at the speeds
needed to implement economical high performance
networking systems.
Clocking and Addressing Schemes
The GS81302TT07/10/19/37E SigmaDDR-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaDDR-II+ B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed. Therefore, the address field of a
SigmaDDR-II+ B2 RAM is always one address pin less than
the advertised index depth (e.g., the 16M x 8 has an 8M
addressable index).
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
© 2011, GSI Technology

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