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IPD60R380E6

Description
MOSFET N-Ch 650V 10.6A DPAK-2
Categorysemiconductor    Discrete semiconductor   
File Size957KB,18 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPD60R380E6 Overview

MOSFET N-Ch 650V 10.6A DPAK-2

IPD60R380E6 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current10.6 A
Rds On - Drain-Source Resistance340 mOhms
Vgs th - Gate-Source Threshold Voltage2.5 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge32 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation83 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height2.3 mm
Length6.5 mm
Transistor Type1 N-Channel
Width6.22 mm
Fall Time8 ns
Rise Time9 ns
Factory Pack Quantity2500
Typical Turn-Off Delay Time56 ns
Typical Turn-On Delay Time11 ns
Unit Weight0.011993 oz
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor
IPx60R380E6
DataSheet
Rev.2.6
Final
PowerManagement&Multimarket

IPD60R380E6 Related Products

IPD60R380E6 IPP60R380E6 IPA60R380E6XKSA1 IPP60R380E6XKSA1 IPD60R380E6ATMA2
Description MOSFET N-Ch 650V 10.6A DPAK-2 Headers u0026 Wire Housings MOSFET LOW POWER_LEGACY MOSFET LOW POWER_LEGACY MOSFET NCH 600V 10.6A TO252
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Is it lead-free? - Lead free Lead free Lead free -
Is it Rohs certified? - conform to conform to conform to -
Parts packaging code - TO-220AB TO-220AB TO-220AB -
package instruction - TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3 GREEN, PLASTIC, TO-220, 3 PIN -
Contacts - 3 3 3 -
Reach Compliance Code - compliant compliant compliant -
Avalanche Energy Efficiency Rating (Eas) - 210 mJ 210 mJ 210 mJ -
Minimum drain-source breakdown voltage - 600 V 600 V 600 V -
Maximum drain current (Abs) (ID) - 10.6 A 10.6 A 10.6 A -
Maximum drain-source on-resistance - 0.38 Ω 0.38 Ω 0.38 Ω -
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code - TO-220AB TO-220AB TO-220AB -
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
Number of components - 1 1 1 -
Number of terminals - 3 3 3 -
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature - 150 °C 150 °C 150 °C -
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) - 83 W 31 W 83 W -
Maximum pulsed drain current (IDM) - 30 A 30 A 30 A -
Certification status - Not Qualified Not Qualified Not Qualified -
surface mount - NO NO NO -
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location - SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications - SWITCHING SWITCHING SWITCHING -
Transistor component materials - SILICON SILICON SILICON -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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