128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDSO34
Parameter Name | Attribute value |
Maker | DALLAS |
Reach Compliance Code | unknow |
Maximum access time | 100 ns |
Other features | 10 YEAR DATA RETENTION |
JESD-30 code | R-PDSO-U34 |
memory density | 1048576 bi |
Memory IC Type | NON-VOLATILE SRAM MODULE |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 34 |
word count | 131072 words |
character code | 128000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 128KX8 |
Package body material | PLASTIC/EPOXY |
encapsulated code | SOJ-I |
Encapsulate equivalent code | MODULE,34LEAD,1.0 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Maximum standby current | 0.00015 A |
Maximum slew rate | 0.085 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | J INVERTED |
Terminal location | DUAL |
DS1345YL-100 | DS1345BL | DS1345BL-70 | DS1345BL-100 | DS1345YL-70 | DS1345YL-100-IND | DS1345YL-70-IND | DS1345BL-70-IND | DS1345BL-100-IND | |
---|---|---|---|---|---|---|---|---|---|
Description | 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDSO34 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 | 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 |
Maker | DALLAS | - | DALLAS | DALLAS | DALLAS | DALLAS | DALLAS | DALLAS | DALLAS |
Reach Compliance Code | unknow | - | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
Maximum access time | 100 ns | - | 70 ns | 100 ns | 70 ns | 100 ns | 70 ns | 70 ns | 100 ns |
Other features | 10 YEAR DATA RETENTION | - | 10 YEAR DATA RETENTION | 10 YEAR DATA RETENTION | 10 YEAR DATA RETENTION | 10 YEAR DATA RETENTION PERIOD | 10 YEAR DATA RETENTION PERIOD | 10 YEAR DATA RETENTION PERIOD | 10 YEAR DATA RETENTION PERIOD |
JESD-30 code | R-PDSO-U34 | - | R-PDSO-U34 | R-PDSO-U34 | R-PDSO-U34 | R-XDMA-U34 | R-XDMA-U34 | R-XDMA-U34 | R-XDMA-U34 |
memory density | 1048576 bi | - | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi |
Memory IC Type | NON-VOLATILE SRAM MODULE | - | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE |
memory width | 8 | - | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Number of functions | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 34 | - | 34 | 34 | 34 | 34 | 34 | 34 | 34 |
word count | 131072 words | - | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
character code | 128000 | - | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
Operating mode | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | - | 70 °C | 70 °C | 70 °C | 85 °C | 85 °C | 85 °C | 85 °C |
organize | 128KX8 | - | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
Encapsulate equivalent code | MODULE,34LEAD,1.0 | - | MODULE,34LEAD,1.0 | MODULE,34LEAD,1.0 | MODULE,34LEAD,1.0 | MODULE,34LEAD,1.0 | MODULE,34LEAD,1.0 | MODULE,34LEAD,1.0 | MODULE,34LEAD,1.0 |
Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
Parallel/Serial | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
power supply | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum standby current | 0.00015 A | - | 0.00015 A | 0.00015 A | 0.00015 A | 0.00015 A | 0.00015 A | 0.00015 A | 0.00015 A |
Maximum slew rate | 0.085 mA | - | 0.085 mA | 0.085 mA | 0.085 mA | 0.085 mA | 0.085 mA | 0.085 mA | 0.085 mA |
Maximum supply voltage (Vsup) | 5.5 V | - | 5.25 V | 5.25 V | 5.5 V | 5.5 V | 5.5 V | 5.25 V | 5.25 V |
Minimum supply voltage (Vsup) | 4.5 V | - | 4.75 V | 4.75 V | 4.5 V | 4.5 V | 4.5 V | 4.75 V | 4.75 V |
Nominal supply voltage (Vsup) | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | YES | - | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | - | CMOS | CMOS | CMOS | CMOS | CMOS | MOS | MOS |
Temperature level | COMMERCIAL | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
Terminal form | J INVERTED | - | J INVERTED | J INVERTED | J INVERTED | J INVERTED | J INVERTED | J INVERTED | J INVERTED |
Terminal location | DUAL | - | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |