ESD8101, ESD8111
ESD Protection Diodes
Ultra Low Capacitance ESD Protection
Diode for High Speed Data Line
The ESD81x1 Series ESD protection diodes are designed to protect
high speed data lines from ESD. Ultra−low capacitance and low ESD
clamping voltage make this device an ideal solution for protecting
voltage sensitive high speed data lines.
Features
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MARKING
DIAGRAMS
ESD8101 (01005)
DSN2
CASE 152AK
ESD8111 (0201)
WLCSP2
CASE 567AV
ESD8111P (0201)
WLCSP2
CASE 152AX
T, F, Q = Device Code
•
Low Capacitance (0.20 pF Typ, I/O to GND)
•
Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
•
Low ESD Clamping Voltage
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
T
F
•
USB 3.0/3.1
•
MHL 2.0
•
eSATA
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature −
Maximum (10 Seconds)
ESD8101:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ESD8111:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
Symbol
T
J
T
stg
T
L
ESD
Value
−55 to +150
−55 to +150
260
Unit
°C
°C
°C
1
PIN CONFIGURATION
AND SCHEMATIC
2
±23
±23
±30
±30
kV
kV
kV
kV
=
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
See Application Note AND8308/D for further description of
survivability specs.
©
Semiconductor Components Industries, LLC, 2016
1
June, 2016 − Rev. 5
Publication Order Number:
ESD8101/D
Q
ESD8101, ESD8111
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
V
RWM
I
R
V
BR
I
T
V
HOLD
I
HOLD
R
DYN
I
PP
V
C
Parameter
Working Peak Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
Clamping Voltage @ I
PP
V
C
= V
HOLD
+ (I
PP
* R
DYN
)
R
DYN
−I
PP
V
BR
V
C
V
RWM
V
HOLD
I
HOLD
I
T
I
R
I
R
I
T
I
HOLD
V
HOLD
V
RWM
V
C
V
BR
V
I
PP
R
DYN
I
V
C
= V
HOLD
+ (I
PP
* R
DYN
)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Reverse Holding Voltage
Holding Reverse Current
ESD8111
Clamping Voltage
ESD8101, ESD8111
Clamping Voltage
TLP (Note 1)
Symbol
V
RWM
V
BR
I
R
V
HOLD
I
HOLD
V
C
V
C
I/O Pin to GND
I
T
= 1 mA, I/O Pin to GND
V
RWM
= 3.3 V, I/O Pin to GND
I/O Pin to GND
I/O Pin to GND
I
PP
= 7.1 A, (8/20
ms
pulse)
I
PP
= 8 A
I
PP
= 16 A
Dynamic Resistance
Junction Capacitance
R
DYN
C
J
I/O Pin to GND
V
R
= 0 V, f = 1 MHz
IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact,
±4
kV Air)
IEC 61000−4−2 Level 2 equivalent
(±8 kV Contact,
±15
kV Air)
6.5
10
0.46
0.2
0.4
W
pF
2.1
17
8.0
5.5
7.9
Conditions
Min
Typ
Max
3.3
8.6
1.0
Unit
V
V
mA
V
mA
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50
W,
t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
ORDERING INFORMATION
Device
ESD8101FCT5G
ESD8111FCT5G
ESD8111PFCT5G
Package
DSN2
(Pb−Free)
WLCSP2
(Pb−Free)
WLCSP2 Side wall Isolated 0201
(Pb−Free)
Shipping
†
10,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
ESD8101, ESD8111
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
C (pF)
C (pF)
0.6
0.5
0.4
0.3
0.2
0.1
0
−3.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−3.5
−2.5
−1.5
−0.5
0.5
1.5
2.5
3.5
−2.5
−1.5
−0.5
0.5
1.5
2.5
3.5
V
BIAS
(V)
V
BIAS
(V)
Figure 1. ESD8101 CV Characteristics
2
0
−2
(dB)
−4
−6
−8
−10
1E7
(dB)
2
0
−2
−4
−6
−8
−10
1E7
Figure 2. ESD8111 CV Characteristics
1E8
1E9
FREQUENCY (Hz)
1E10 3E10
1E8
1E9
FREQUENCY (Hz)
1E10 3E10
Figure 3. ESD8101 S21 Insertion Loss
1.0
0.9
0.8
CAPACITANCE (pF)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
CAPACITANCE (pF)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
Figure 4. ESD8111 S21 Insertion Loss
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Figure 5. ESD8101 Capacitance over
Frequency
Figure 6. ESD8111 Capacitance over
Frequency
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3
ESD8101, ESD8111
TYPICAL CHARACTERISTICS
20
18
16
TLP CURRENT (A)
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
V
C
, VOLTAGE (V)
8
V
IEC
, EQUIVALENT (kV)
TLP CURRENT (A)
10
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
V
C
, VOLTAGE (V)
2
0
4
6
8
V
IEC
, EQUIVALENT (kV)
10
6
4
2
0
20
Figure 7. ESD8101 Positive TLP I−V Curve
−20
−18
−16
TLP CURRENT (A)
−14
8
V
IEC
, EQUIVALENT (kV)
10
−20
−18
−16
TLP CURRENT (A)
−14
Figure 8. ESD8111 Positive TLP I−V Curve
10
8
V
IEC
, EQUIVALENT (kV)
−12
−10
−8
−6
−4
−2
0
0
2
4
6
8
10
12
14
16
18
V
C
, VOLTAGE (V)
6
−12
−10
−8
−6
−4
−2
0
0
2
4
6
8
10
12
14
16
18
20
V
C
, VOLTAGE (V)
6
4
4
2
0
20
2
0
Figure 9. ESD8101 Negative TLP I−V Curve
Figure 10. ESD8111 Negative TLP I−V Curve
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4
ESD8101, ESD8111
IEC 61000−4−2 Spec.
Test Volt-
age (kV)
2
4
6
8
First Peak
Current
(A)
7.5
15
22.5
30
Current at
30 ns (A)
4
8
12
16
Current at
60 ns (A)
2
4
6
8
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
I @ 30 ns
IEC61000−4−2 Waveform
I
peak
100%
90%
Level
1
2
3
4
Figure 11. IEC61000−4−2 Spec
Transmission Line Pulse (TLP) Measurement
50
W
Coax
Cable
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 12. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 13 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
L
50
W
Coax
Cable
S
Attenuator
÷
10 MW
I
M
V
M
V
C
Oscilloscope
DUT
Figure 12. Simplified Schematic of a Typical TLP
System
Figure 13. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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