THBT15011, THBT20011, THBT27011
Tripolar overvoltage protection for telecom line
Features
■
bidirectional crowbar protection between TIP
and GND, RING and GND and between TIP
and RING
peak pulse current:
I
PP
= 30 A for 10/1000 µs surge
holding current: I
H
= 150 mA
SO-8
■
■
Complies with Bellcore standard
■
TR-NWT-001089-Core, (second level) with line
series resistors:
– 10/1000 µs, 1000 V
– 2/10 µs, 2500 V (first level)
– 2/10 µs, 5000 V
Figure 1.
Schematic diagram
TIP
1
GND
2
GND
3
RING
4
8
TIP
7
GND
6
GND
5
RING
Description
Dedicated to telecommunication equipment
protection, these devices provide a triple
bidirectional protection function.
They ensure the same protection capability with
the same breakdown voltage both in longitudinal
mode and transversal mode.
A particular attention has been given to the
internal wire bonding. The “4-point” configuration
ensures a reliable protection, eliminating
overvoltages introduced by the parasitic
inductances of the wiring (Ldi/dt), especially for
very fast transient overvoltages.
Dynamic characteristics have been defined for
several types of surges to meet the SLIC
maximum ratings.
December 2010
Doc ID 3767 Rev 9
1/11
www.st.com
11
Characteristics
THBT15011, THBT20011, THBT27011
1
Characteristics
Table 1.
Symbol
I
PP
I
TSM
Tstg
Tj
T
L
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse current
(1) (2)
Non repetitive surge peak on-state current
(F = 50 Hz)
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s
10 / 1000 µs
t
p
= 10 ms
t=1s
Value
30
8
3.5
- 40 to + 150
150
260
Unit
A
A
°C
°C
1. For pulse waveform see
Figure 2
2. See
Figure 7: Test circuit 4 for I
PP
parameter
Figure 2.
Pulse waveform
% I
10 0
PP
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
t
r
t
p
t
Figure 3.
Surge peak current versus overload duration
I
TSM
(A)
10
9
8
7
6
5
4
3
2
1
0
1E-2
1E-1
1E+0
F=50Hz
Tj initial=25°C
t(s)
1E+1
1E+2
1E+3
Table 2.
Symbol
R
th(j-a)
Thermal resistance
Parameter
Junction to ambient
Value
170
Unit
°C/W
2/11
Doc ID 3767 Rev 9
THBT15011, THBT20011, THBT27011
Table 3.
Symbol
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
V
F
I
PP
C
Characteristics
Electrical characteristics (T
amb
= 25 °C)
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuos reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Forward voltage drop
Peak pulse current
Capacitance
I
BO
I
H
I
R
I
PP
I
V
V
RM
V
V
BO
BR
Table 4.
Static parameters
I
RM
@ V
RM
I
R(1)
@ V
R
max.
V
135
180
240
µA
50
50
50
V
150
200
270
max.
V
210
290
380
V
BO(2)
@ I
BO
min.
V
50
50
50
max.
mA
400
400
400
I
H(3)
min.
mA
150
150
150
C
(4)
max.
pF
80
80
80
Order code
max.
µA
THBT15011D
THBT20011D
THBT27011D
5
5
5
1. I
R
measured at V
R
guarantee V
BR
min
≥
V
R
2. Measured at 50 Hz (1 cycle) - See
Figure 4: Test circuit 1 for IBO and VBO parameters.
3. See
Figure 5: Test circuit 2 for dynamic IH parameter.
4. V
R
= 1 V, F = 1 MHz.
Table 5.
Type
Dynamic breakover voltages (transversal mode)
Symbol
10/700 µs
1.2/50 µs
2/10μs
10/700 µs
1.2/50 µs
2/10 µs
10/700 µs
1.2/50 µs
2/10 µs
Test conditions
(1)
1.5 kV
1.5 kV
2.5 kV
1.5 kV
1.5 kV
2.5 kV
1.5 kV
1.5 kV
2.5 kV
R
p
= 10
Ω
R
p
= 10
Ω
R
p
= 62
Ω
R
p
= 10
Ω
R
p
= 10
Ω
R
p
= 62
Ω
R
p
= 10
Ω
R
p
= 10
Ω
R
p
= 62
Ω
I
PP
= 30 A
I
PP
= 30 A
I
PP
= 38 A
I
PP
= 30 A
I
PP
= 30 A
I
PP
= 38 A
I
PP
= 30 A
I
PP
= 30 A
I
PP
= 38 A
Max
190
190
200
270
270
280
360
360
400
Unit
THBT15011D
V
BO
V
THBT20011D
V
BO
V
THBT27011D
V
BO
V
1. See
Figure 6: Test circuit 3 for V
BO
parameters.
R
p
is the protection resistor located on the line card.
Doc ID 3767 Rev 9
3/11
Test circuits
THBT15011, THBT20011, THBT27011
2
2.1
Test circuits
Test procedure for test circuit 1 for I
BO
and V
BO
parameters
Figure 4.
Test circuit 1 for I
BO
and V
BO
parameters
K
ton = 20ms
R1 = 140Ω
R2 = 240Ω
220V 50Hz
Vout
DUT
VBO
measurement
1/4
IBO
measurement
Pulse test duration (t
p
= 20 ms):
●
●
For bidirectional devices switch K is closed.
For unidirectional devices switch K is open.
For device with V
BO
< 200 V, V
OUT
= 250 V
RMS
, R1 = 140
Ω.
For device with V
BO
≥
200 V, V
OUT
= 480 V
RMS
, R2 = 240
Ω.
V
OUT
selection:
●
●
2.2
Test procedure for test circuit 2 for dynamic I
H
parameter
Figure 5.
Test circuit 2 for dynamic I
H
parameter
R
Surge generator
V
BAT
= - 48 V
D.U.T
This is a go no-go test, which can confirm the holding current (I
H
) level.
Procedure
1.
2.
3.
Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
Fire the D.U.T. with a surge current I
PP
= 10A, 10/1000µs.
The D.U.T. will come back off-state within 50 ms maximum.
4/11
Doc ID 3767 Rev 9
THBT15011, THBT20011, THBT27011
Test circuits
2.3
Test circuit 3 for V
BO
parameters
Figure 6.
Test circuit 3 for V
BO
parameters
R
4
(V
P
is defined in no load condition)
L
T IP
R2
R IN G
R
3
VP
C
1
R1
C
2
G ND
Table 6.
Pulse (µs)
t
r
10
1.2
2
t
p
Parameters for test crcuit 3 for selected pulse characteristics
V
p
(V)
1500
1500
2500
C
1
(µF)
20
1
10
C
2
(nF)
200
33
0
L
(µH)
0
0
1.1
R
1
(Ω)
50
76
1.3
R
2
(Ω)
15
13
0
R
3
(Ω)
25
25
3
R
4
(Ω)
25
25
3
I
PP
(A)
30
30
38
R
p
(Ω)
10
10
62
700
50
10
2.4
Test circuit 4 for I
PP
parameter
Figure 7.
Test circuit 4 for I
PP
parameter
Longitudinal mode
TIP
I
PP
/2
RP
See test
circuit 3
RING
I
PP
/2
RP
THBT
GND
Transversal mode
TIP or
RING
I
See test
circuit 3
PP
RP
THBT
GND
Doc ID 3767 Rev 9
5/11
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