AH225
1 W High Linearity InGaP HBT Amplifier
Applications
Repeaters
Base Station Transceivers
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / CDMA / WiMAX
8-Pin SOIC-8 Package
Product Features
400 – 2700 MHz
15.5 dB Gain at 2140 MHz
+31 dBm P1dB
+46 dBm Output IP3
300 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Capable of handling 10:1 VSWR at 5 V
CC
, 2.14 GHz,
+31.5 dBm CW Pout or +23 dBm WCDMA Pout
Lead-free / RoHS-compliant SOIC-8 Package
Functional Block Diagram
Pin 1 Reference Mark
Vbias
N/C
RF_In
N/C
1
2
3
4
8 Iref
7 RF_Out
6 RF_Out
5 N/C
Backside Paddle - RF/DC GND
General Description
The AH225 is a high dynamic range driver amplifier in a
low-cost surface-mount package. The InGaP / GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to
+46 dBm OIP3 and +31.2 dBm of compressed 1 dB
power. The integrated active bias circuitry in the devices
enables excellent stable linearity performance over
temperature. It is housed in a lead-free/RoHS-compliant
SOIC-8 package. All devices are 100% RF and DC tested.
The AH225 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH225 is ideal for the final stage
of small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a wide
variety of other applications within the 400 to 2700 MHz
frequency band.
Pin Configuration
Pin No.
1
2, 4, 5
3
6, 7
8
Backside Paddle
Label
V
BIAS
N / C
RF
IN
RF
OUT
I
REF
RF/ DC GND
Ordering Information
Part No.
AH225-S8G
Description
1W High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel
Datasheet: Rev H 02-11-16
© 2016 TriQuint Semiconductor, Inc
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Disclaimer: Subject to change without notice
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AH225
1 W High Linearity InGaP HBT Amplifier
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−65 to 150 °C
RF Input Power, CW, 50 Ω, T=+25 °C +26 dBm
Device Voltage (V
CC
, V
BIAS
)
+8 V
Device Current
900 mA
Device Power
+5 W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
V
CC
T
CASE
Tj for >10
6
hours MTTF
Min
+4.5
−40
Typ
+5
Max Units
+5.25
+85
+200
V
°C
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
V
CC
=+5 V,I
CQ
= 300 mA, I
REF
= 15 mA , Temp= +25°C, tuned application circuit
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Channel Power
(1)
Noise Figure
Operating Current Range, Icc
(2)
Thermal Resistance
(Junction to case)
jc
Conditions
Min
400
13.3
Typ
2140
15.5
18
9.4
+31.2
+46
+21.3
6
300
17.5
Max
2700
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C / W
Pout = +19 dBm / tone, Δf=1 MHz
ACLR= −50 dBc
+30
+43
350
35
Junction to backside paddle
Notes:
1. ACLR Test set-up: 3GPP WCDMA, 1±64DPCH, ±5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability.
2. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.
Performance Summary Table
Test conditions unless otherwise noted:
V
CC
=+5 V, I
CQ
= 300 mA, Temp= +25°C, in an application circuit tuned for each frequency.
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(1)
WCDMA Channel Power
(ACLR= −50 dBc)
750
20.1
14.5
7
+30.4
+45
+21.2
940
19.8
10.5
8.4
+31
+47.3
+21.7
1500
17
17.2
11
+31.3
+48
+22
Typical
1840
15.1
11
10.7
+30.7
+46
+21.6
1960
15.4
15.4
8.3
+31.3
+53.6
+21.7
2140
15.2
18
9.4
+31
+47
+21.4
2600
13.2
19.4
5.5
+30.5
+48.7
+21.3
Units
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
1. OIP3 is measured with two tones at an output power of +20 dBm / tone for 750 MHz, +22 dBm / tone for 940 MHz and
+19 dBm / tone for 1490, 1840, 1960, 2140, 2600 MHz application circuits respectively.
Datasheet: Rev H 02-11-16
© 2016 TriQuint Semiconductor, Inc
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Disclaimer: Subject to change without notice
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AH225
1 W High Linearity InGaP HBT Amplifier
Device Characterization Data
Gain and Max Stable Gain
45
De-embedded S-Parameters
Input Smith Chart
1
Output Smith Chart
1
0.8
40
35
30
Gain (dB)
MSG (dB)
0.8
Gain (dB)
0.6
0.6
25
20
15
0.4
0.4
0.2
0.2
0
0
10
5
0
-1
-0.75
-0.5
-0.25
-0.2
-0.4
0
0.25
0.5
0.75
1
-1
-0.75
-0.5
-0.25
-0.2
0
-0.4
0.25
0.5
0.75
1
-0.6
-0.6
0
0.5
1
1.5
2
Frequency (MHz)
2.5
3
-0.8
-1
-0.8
-1
Notes:
1. The gain for the unmatched device in 50 ohm system is shown as the trace in blue color, Gain (dB). For a tuned circuit for a
particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is
shown in the red line, DB [MSG]. The impedance loss plots are shown from 0.05 – 4 GHz.
S-Parameters
Test Conditions: V
CC
= +5 V, I
CQ
= 300 mA, T =+25
C,
unmatched 50 ohm system, calibrated to device leads)
Freq (GHz)
50
100
200
400
800
1000
1200
1400
1800
2100
2000
2200
2400
2600
2800
3000
S11 (dB)
−2.90
−1.57
−0.99
−0.81
−0.97
−1.12
−1.25
−1.53
−2.52
−4.69
−3.69
−6.45
−13.76
−10.27
−4.15
−1.93
S11 (ang)
−165.27
−171.34
179.84
169.25
152.64
145.10
136.77
128.95
110.16
91.38
98.77
86.18
87.27
171.20
159.31
143.93
S21 (dB)
32.12
28.59
23.57
17.96
12.56
11.02
10.01
9.29
8.93
9.54
9.27
9.79
10.01
8.85
6.56
3.19
S21 (ang)
136.60
116.71
100.17
86.66
69.77
62.27
54.20
46.48
27.07
5.44
13.27
−4.317
−28.04
−57.83
−84.16
−104.79
S12 (dB)
−40.91
−38.86
−37.78
−37.58
−36.47
−36.53
−35.91
−35.54
−34.79
−33.84
−34.06
−33.35
−33.51
−34.02
−35.29
−34.70
S12 (ang)
46.68
31.54
17.25
7.00
−0.03
−6.84
−8.53
−14.78
−32.76
−58.32
−50.56
−72.56
−107.65
−157.07
156.89
116.80
S22 (dB)
−0.94
−1.66
−1.95
−2.15
−2.08
−2.19
−2.20
−2.19
−2.20
−1.92
−2.01
−1.80
−1.25
−0.81
−0.78
−0.99
S22 (ang)
−74.85
−113.38
−143.44
−162.82
−173.99
−175.67
−177.71
−178.63
−179.60
−179.47
179.89
179.99
179.43
175.18
171.95
167.43
Datasheet: Rev H 02-11-16
© 2016 TriQuint Semiconductor, Inc
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Disclaimer: Subject to change without notice
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AH225
1 W High Linearity InGaP HBT Amplifier
Reference Design: 700 – 850 MHz
J5 GND
J3
Vcc=+5V
C7
R6
R7
C7
C17
C1
J4 Vref
10 uF
6032
R7
0
R8
Vpd
R6
0
C12
DNP
D3
SM05T1G
1000 pF
1000 pF
FB1
R3
51
R1
120
C15
C17
C12
R3
D3
R1
U1
J3
FB1
J4
0.1 uF
0805
C1
L4
L3
C15
L1
YES
C9
C8
C11
R2
C10
L2
R5
C5
U1
C6
C3
L4
0
J5
J1
RF
Input
C11
R2
51
C10
100 pF
22 pF
C9
0.9 pF
L2
2.7 nH
C8
8.2 pF
R5
U1
AH225
1
2
3
8
7
6
5
Backside
Paddle
L3
82 nH
47 pF
L1
33 nH
1008
C6
2.2 nH
C5
100 pF
C3
J2
RF
Output
1.8
4
6.8 pF
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R7 = no
connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of C6 is placed at 70 mils from the edge of AH225 RFout pin pad (3
°
at 750 MHz).
C5 is placed against the edge of C6.
The edge of R5 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5
°
at 750 MHz).
C8 is placed against the edge of R5, L2 against C8 and C9 against L2.
Zero ohm jumpers may be replaced with copper traces in the target application layout.
DNP means Do Not Place.
Inductor L3 on Vpd line is critical for linearity performance.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
Typical Performance 700 – 850 MHz
Test conditions unless otherwise noted: V
CC
= +5 V, I
CQ
= 300 mA
Parameter
Conditions
Typical Value
700
20
12
6
+30.4
+44.1
+20.6
+22.8
750
20.1
14.5
7
+30.4
+45
+21.2
+23.6
800
20.2
16
8.6
+30.7
+44.6
+21.4
+23.3
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 20 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power
(1)
ACLR= −50 dBc
OFDMA Channel Power at 2.5% EVM
(2)
Pout= +17 dBm/Tone, Δf = 1 MHz
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2.
EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Datasheet: Rev H 02-11-16
© 2016 TriQuint Semiconductor, Inc
-
4 of 21
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Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
AH225
1 W High Linearity InGaP HBT Amplifier
Typical Performance Plots 700 – 850 MHz
S21 vs. Frequency
22
T=+25°C
Return Loss vs. Frequency
0
T=+25°C
21
Return Loss (dB)
S21 (dB)
-5
S22
20
19
-10
-15
S11
18
17
600
650
700
750
800
Frequency (MHz)
850
900
-20
-25
600
650
700
750
800
Frequency (MHz)
850
900
P1dB vs. Frequency
32
T=+25°C
ACLR vs. Pout vs. Freq
-35
T=+25°C
3GPP WCDMA,TM1+64DPCH,+5 MHz Offset
31
P1dB (dBm)
-40
ACLR (dBc)
30
29
-45
-50
700 MHz
750 MHz
800 MHz
850 MHz
28
27
700
730
760
790
Frequency (MHz)
820
850
-55
-60
19
20
21
22
Pout (dBm)
23
24
25
EVM vs. Pout vs. Freq
3
T=+25°C
OFDM,QAM-64,54 Mb/s
OIP3 vs. Pout / tone vs. Freq
55
700 MHz
750 MHz
800 MHz
850 MHz
1 MHz tone spacing
T=+25°C
2.5
50
700 MHz
750 MHz
800 MHz
850 MHz
1.5
1
OIP3 (dBm)
2
EVM (%)
45
40
0.5
0
19
20
21
22
Pout (dBm)
23
24
35
17
19
21
Pout / tone (dBm)
23
25
Datasheet: Rev H 02-11-16
© 2016 TriQuint Semiconductor, Inc
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5 of 21
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Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
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