EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

DSPIC30F3014T-30I/ML

Description
Digital Signal Processors & Controllers - DSP, DSC 44LD 30MIPS 24 KB
CategoryThe embedded processor and controller    Microcontrollers and processors   
File Size2MB,229 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

DSPIC30F3014T-30I/ML Overview

Digital Signal Processors & Controllers - DSP, DSC 44LD 30MIPS 24 KB

DSPIC30F3014T-30I/ML Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeQFN
package instruction8 X 8 MM, PLASTIC, QFN-44
Contacts44
Reach Compliance Codecompliant
ECCN code3A991.A.2
Is SamacsysN
Has ADCYES
Other featuresALSO OPERATES AT 2.5V MINIMUM SUPPLY AT 10 MHZ
Address bus width
bit size16
maximum clock frequency40 MHz
DAC channelNO
DMA channelNO
External data bus width
FormatFIXED-POINT
JESD-30 codeS-PQCC-N44
JESD-609 codee3
length8 mm
Humidity sensitivity level1
Number of I/O lines30
Number of terminals44
On-chip program ROM width24
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
PWM channelYES
Package body materialPLASTIC/EPOXY
encapsulated codeHVQCCN
Encapsulate equivalent codeLCC44,.32SQ,25
Package shapeSQUARE
Package formCHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply3/5 V
Certification statusNot Qualified
RAM (bytes)2048
RAM (number of words)1024
rom(word)8192
ROM programmabilityFLASH
Maximum seat height1 mm
speed30 MHz
Maximum supply voltage5.5 V
Minimum supply voltage4.5 V
Nominal supply voltage5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
uPs/uCs/peripheral integrated circuit typeMICROCONTROLLER, RISC
Base Number Matches1
Uncover the mystery of MOS tube damage! What other reasons do you know?
Mos switch principle (brief): MOS is a voltage-driven device. As long as an appropriate voltage is applied between the gate and the source, a path between the source and the drain is formed. The resis...
eric_wang Power technology
Let's discuss whether GaN materials are a key technology in 5G applications.
The construction of 5G needs to consider factors such as cost, reliability, and performance. Traditional materials have limitations compared to GaN. For example, the characteristics of GaN materials t...
alan000345 RF/Wirelessly
FPGA Basics (I)
...
至芯科技FPGA大牛 FPGA/CPLD
Sensortile.box
The firmware of "Sensortile.box" can be run in LEIL5. Can "Sensortile.box" or its firmware run in "STM32CubemMX"? Or how can I run it in "STM32CubemMX"?...
lanhua ST MEMS Sensor Creative Design Competition
Agilent Fundamentals of RF and Microwave
Modern receiving systems must often process veryweak signals, but the noise added by the systemcomponents tends to obscure those very weak signals.Sensitivity, bit error ratio (BER) and noise figure a...
JasonYoo Test/Measurement
[LPC8N04 Evaluation] Evaluation of the various functions of the development board
[align=left][font=微软雅黑][size=2] I was on a business trip almost the entire week last week and had no time to conduct the evaluation. Fortunately, I will be at home this week and can continue testing i...
wgsxsm NXP MCU

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号