IRFR420TRPBF datasheet, PDF - EEWORLD Datasheet

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IRFR420TRPBF: DescriptionMOSFET N-Chan 500V 2.4 Amp; CategoryDiscrete semiconductor The transistor; File Size1MB，11 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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IRFR420TRPBF Overview

MOSFET N-Chan 500V 2.4 Amp

IRFR420TRPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant
Factory Lead Time	10 weeks
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	2.4 A
Maximum drain current (ID)	2.4 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	42 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFR420, IRFU420, SiHFR420, SiHFU420

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

max. (nC)

(nC)

Configuration

= 10 V

3.3

Single

FEATURES

500

3.0

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Surface mount (IRFR420, SiHFR420)

• Straight lead (IRFU420, SiHFU420)

Available

• Available in tape and reel

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

D S

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR420-GE3

IRFR420PbF

DPAK (TO-252)

SiHFR420TR-GE3

IRFR420TRPbF

DPAK (TO-252)

SiHFR420TRL-GE3

IRFR420TRLPbF

DPAK (TO-252)

SiHFR420TRR-GE3

IRFR420TRRPbF

IPAK (TO-251)

SiHFU420-GE3

IRFU420PbF

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB

mount)

= 25 °C

dV/dt

, T

stg

for 10 s

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche

Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 124 mH, R

= 25

,

= 2.4 A (see fig. 12).

c. I



2.4 A, dI/dt



50 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-1522-Rev. E, 08-Aug-16

Document Number: 91275

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

500

± 20

2.4

1.5

8.0

0.33

0.020

400

2.4

4.2

2.5

3.5

-55 to +150

260

W/°C

V/ns

°C

UNIT

IRFR420TRPBF Related Products

	IRFR420TRPBF	IRFU420	IRFR420TRL	IRFU420PBF
Description	MOSFET N-Chan 500V 2.4 Amp	MOSFET N-Chan 500V 2.4 Amp	MOSFET N-Chan 500V 2.4 Amp	MOSFET N-Chan 500V 2.4 Amp
Is it Rohs certified?	conform to	incompatible	incompatible	conform to
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	not_compliant	unknown	unknown	unknown
Configuration	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V	500 V
Maximum drain current (Abs) (ID)	2.4 A	2.4 A	2.4 A	2.4 A
Maximum drain current (ID)	2.4 A	2.4 A	2.4 A	2.4 A
Maximum drain-source on-resistance	3 Ω	3 Ω	3 Ω	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-251AA	TO-252AA	TO-251
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e0	e0	e3
Number of components	1	1	1	1
Number of terminals	2	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	NOT APPLICABLE	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	42 W	42 W	42 W	42 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	NO
Terminal surface	Matte Tin (Sn)	TIN LEAD	TIN LEAD	Matte Tin (Sn)
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT APPLICABLE	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Shell connection	DRAIN	-	DRAIN	DRAIN
Maker	-	Vishay	Vishay	Vishay
Avalanche Energy Efficiency Rating (Eas)	-	400 mJ	400 mJ	400 mJ
Maximum pulsed drain current (IDM)	-	8 A	8 A	8 A

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