MOSFET NFET SO8FL 30V 104A 3.5mOhm
| Parameter Name | Attribute value |
| Brand Name | ON Semiconductor |
| Is it lead-free? | Lead free |
| Maker | ON Semiconductor |
| Parts packaging code | DFN |
| package instruction | SMALL OUTLINE, R-PDSO-F5 |
| Contacts | 5 |
| Manufacturer packaging code | 488AA |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 1 week |
| Avalanche Energy Efficiency Rating (Eas) | 392 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 12 A |
| Maximum drain-source on-resistance | 0.005 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-F5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 208 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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