IGBT Modules Power Module - IGBT
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Microsemi |
| package instruction | FLANGE MOUNT, R-XUFM-T12 |
| Contacts | 12 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 32 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-XUFM-T12 |
| JESD-609 code | e1 |
| Humidity sensitivity level | 1 |
| Number of components | 4 |
| Number of terminals | 12 |
| Maximum operating temperature | 175 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 62 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN SILVER COPPER |
| Terminal form | THROUGH-HOLE |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 310 ns |
| Nominal on time (ton) | 170 ns |
| VCEsat-Max | 1.9 V |
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