Green
DMC2004LPK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage V
GS(th)
< 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
•
Case: X1-DFN1612-6
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e4
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.003 grams (approximate)
NEW PRODUCT
•
•
•
•
•
•
•
X1-DFN1612-6
D
1
6
G
2
5
S
2
4
Q
1
Q
2
ESD protected
1
S
1
2
G
1
3
D
2
TOP VIEW
Internal Schematic
Ordering Information
Part Number
DMC2004LPK-7
Notes:
(Note 4)
Case
X1-DFN1612-6
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
C1 = Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
C1
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
Apr
4
YM
2014
B
May
5
Jun
6
2015
C
Jul
7
2016
D
Aug
8
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
1 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
Maximum Ratings N-CHANNEL – Q
1
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
T
A
= +25°C
T
A
= +85°C
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
DSS
V
GSS
I
D
Value
20
±8
750
540
Unit
V
V
mA
NEW PRODUCT
Maximum Ratings P-CHANNEL – Q
2
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
DSS
V
GSS
Value
-20
±8
-600
-430
Unit
V
V
mA
T
A
= +25°C
T
A
= +85°C
I
D
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
P
D
R
θJA
T
J
, T
STG
Value
500
250
-65 to +150
Unit
mW
°C/W
°C
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics N-CHANNEL – Q
1
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Min
20
—
—
0.5
—
—
—
200
0.5
—
—
—
Typ
—
—
—
—
0.4
0.5
0.7
—
—
—
—
—
Max
—
1
±
1
1.0
0.55
0.70
0.90
—
1.2
150
25
20
Unit
V
µA
µA
V
Ω
mS
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= 10µA
V
DS
= 16V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Electrical Characteristics P-CHANNEL – Q
2
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Min
-20
—
—
-0.5
—
200
-0.5
—
—
—
Typ
—
—
—
—
0.7
1.1
1.7
—
—
—
—
—
Max
—
-1.0
±
1.0
-1.0
0.9
1.4
2.0
—
-1.2
175
30
20
Unit
V
µA
µA
V
Ω
mS
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= -115mA
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
2 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
Q
1
, N-CHANNEL
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
0
0
V
DS
, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
I
D
, DRAIN CURRENT (A)
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
I
D
, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
I
D
, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
3 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
Q
1
, N-CHANNEL,
(cont.)
NEW PRODUCT
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
I
D
, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
4 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
Q
2
, P-CHANNEL
-I
D
, DRAIN CURRENT (A)
NEW PRODUCT
0
0
-V
DS
, DRAIN SOURCE VOLTAGE (V)
Fig. 11 Typical Output Characteristics
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 12 Typical Transfer Characteristics
-V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 13 Gate Threshold Voltage vs. Ambient Temperature
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 14 Static Drain-Source On-Resistance vs. Drain Current
10
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 15 Static Drain-Source On-Resistance vs.
Drain Current
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 16 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
5 of 8
www.diodes.com
February 2013
© Diodes Incorporated
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