IXTP26P20P datasheet, PDF - EEWORLD Datasheet

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IXTP26P20P: DescriptionMOSFET -26.0 Amps -200V 0.170 Rds; CategoryDiscrete semiconductor The transistor; File Size151KB，6 Pages; ManufacturerIXYS; Environmental Compliance

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IXTP26P20P Overview

MOSFET -26.0 Amps -200V 0.170 Rds

IXTP26P20P Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	TO-220AB
package instruction	PLASTIC, TO-220, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1500 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	26 A
Maximum drain current (ID)	26 A
Maximum drain-source on-resistance	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	70 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

IXTP26P20P Related Products

	IXTP26P20P	IXTH26P20P
Description	MOSFET -26.0 Amps -200V 0.170 Rds	MOSFET -26.0 Amps -200V 0.170 Rds
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	IXYS	IXYS
Parts packaging code	TO-220AB	TO-247AD
package instruction	PLASTIC, TO-220, 3 PIN	PLASTIC PACKAGE-3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1500 mJ	1500 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	26 A	26 A
Maximum drain current (ID)	26 A	26 A
Maximum drain-source on-resistance	0.17 Ω	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-247AD
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	300 W	300 W
Maximum pulsed drain current (IDM)	70 A	70 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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