BSC032NE2LSATMA1 datasheet, PDF

BSC032NE2LSATMA1: DescriptionMOSFET N-Ch 25V 84A TDSON-8 OptiMOS; Categorysemiconductor Discrete semiconductor; File Size695KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET N-Ch 25V 84A TDSON-8 OptiMOS

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TDSON-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	84 A
Rds On - Drain-Source Resistance	2.7 mOhms
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	21 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	37 W
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Height	1.27 mm
Length	5.9 mm
Transistor Type	1 N-Channel
Width	5.15 mm
Forward Transconductance - Min	46 S
Fall Time	2.2 ns
Rise Time	2.8 ns
Factory Pack Quantity	5000
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	3.3 ns
Unit Weight	0.004156 oz

	BSC032NE2LSATMA1	BSC032NE2LS
Description	MOSFET N-Ch 25V 84A TDSON-8 OptiMOS	MOSFET N-Ch 25V 84A TDSON-8 OptiMOS
Product Attribute	Attribute Value	Attribute Value
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Details	Details
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TDSON-8	TDSON-8
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V	25 V
Id - Continuous Drain Current	84 A	84 A
Rds On - Drain-Source Resistance	2.7 mOhms	2.7 mOhms
Vgs th - Gate-Source Threshold Voltage	1.2 V	1.2 V
Vgs - Gate-Source Voltage	20 V	20 V
Qg - Gate Charge	21 nC	21 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Configuration	Single	Single
Pd - Power Dissipation	37 W	37 W
Channel Mode	Enhancement	Enhancement
Height	1.27 mm	1.27 mm
Length	5.9 mm	5.9 mm
Transistor Type	1 N-Channel	1 N-Channel
Width	5.15 mm	5.15 mm
Forward Transconductance - Min	46 S	46 S
Fall Time	2.2 ns	2.2 ns
Rise Time	2.8 ns	2.8 ns
Factory Pack Quantity	5000	5000
Typical Turn-Off Delay Time	15 ns	15 ns
Typical Turn-On Delay Time	3.3 ns	3.3 ns
Unit Weight	0.004156 oz	0.006702 oz
Packaging	Reel	Reel

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