IGB15N60TATMA1 datasheet, PDF - EEWORLD Datasheet

IGB15N60TATMA1: DescriptionIGBT Transistors LOW LOSS IGBT TECH 600V 15A; CategoryDiscrete semiconductor The transistor; File Size637KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	20 weeks
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	291 ns
Nominal on time (ton)	32 ns
Base Number Matches	1

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