ZVN3310ASTOA datasheet, PDF - EEWORLD Datasheet

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ZVN3310ASTOA: DescriptionMOSFET N-Chnl 100V; CategoryDiscrete semiconductor The transistor; File Size78KB，3 Pages; ManufacturerDiodes Incorporated

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ZVN3310ASTOA Overview

MOSFET N-Chnl 100V

ZVN3310ASTOA Parametric

Parameter Name	Attribute value
Parts packaging code	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	0.2 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

DS

* R

DS(on)

= 10Ω

ZVN3310A

D

G

S

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

VALUE

100

200

2

±

20

625

-55 to +150

UNIT

V

mA

A

V

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

100

40

15

5

7

6

7

500

10

100

0.8

2.4

20

1

50

MAX. UNIT CONDITIONS.

V

nA

µA

mA

Ω

mS

pF

ns

V

DD

≈25V,

I

D

=500mA

V

DS

=25V, V

GS

=0V, f=1MHz

I

D

=1mA, V

GS

=0V

ID=1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=100V, V

GS

=0

V

DS

=80V, V

GS

=0V, T=125°C

(2)

V

DS

=25V, V

GS

=10V

V

GS

=10V,I

D

=500mA

V

DS

=25V,I

D

=500mA

Forward Transconductance(1)(2 g

fs

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

3-378

ZVN3310ASTOA Related Products

	ZVN3310ASTOA	ZVN3310ASTOB
Description	MOSFET N-Chnl 100V	MOSFET N-Chnl 100V
Parts packaging code	TO-92	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	0.2 A	0.2 A
Maximum drain-source on-resistance	10 Ω	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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