71V67603S150PFG datasheet, PDF

71V67603S150PFG: DescriptionSRAM 9M 3.3V PBSRAM SLOW P/L; Categorystorage storage; File Size243KB，20 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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SRAM 9M 3.3V PBSRAM SLOW P/L

Parameter Name	Attribute value
Brand Name	Integrated Device Technology
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TQFP
package instruction	LQFP, QFP100,.63X.87
Contacts	100
Manufacturer packaging code	PKG100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	3.8 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	150 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e3
length	20 mm
memory density	9437184 bit
Memory IC Type	STANDARD SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.05 A
Minimum standby current	3.14 V
Maximum slew rate	0.305 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	14 mm
Base Number Matches	1

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