IPW 35 N6 5H / I PW3 5N6 5H FD
TM
TR EN C H S TO P
S M PS
HighSpeed DuoPack
IG BT
With soft, fast recovery anti-parallel Rapid Diode
Dat ashe et
Rev. 1.1, 2013-12-01
IPW35N65H / IPW35N65HFD
HighSpeed DuoPack: IGBT in
TRENCHSTOP™ SMPS
technology with soft, fast recovery
anti-parallel Rapid Diode
IPW35N65H
1
IPW35N65HFD
Features
Highly robust DuoPack Diode
Low E
oss
and high light load efficiency
Low Q
g
optimized for fast switching
R
CE(on),eq
stable vs. temperature
Fast switching for higher efficiency
T
vj,max
=175°C; electrical parameters at T
vj
=150°C for ease of comparison to MOSFET
Application
Silver BOX, Server, Telecom Switch Mode Power Supply
Package: PG-TO247-3
Table 1 Key Performance Parameters
Parameter
Value
V
CE
R
CE(on)
,typ @ T
C
=25°C
Q
rr
t
rr
I
rrm
Q
g,typ
I
C,pulse
E
oss
@ 400V
650
0.078
440
55
12.5
63
105
2.8
Unit
V
Ω
nC
ns
A
nC
A
µJ
1
Not recommended for DCM operation.
2
Rev. 1.1., 2013-12-01
IPW35N65H / IPW35N65HFD
Maximum Ratings @ T
j
=25°C unless specified
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current
2
1
Symbol
V
CE
I
C
Value
650
Unit
V
59
33
I
Cpulse
-
I
F
30
15
2
A
A
A
A
105
105
Turn off safe operating area
V
CE
≤ 650V,T
vj
≤ 150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulse current
Static
Transient Gate-Emitter Voltage (t
p
=10µs, D<0.01)
Power dissipation
T
C
= 25°C
1
1
1
A
A
A
V
I
Fpulse
V
GE
45
±20
±30
Gate emitter voltage
P
tot
T
vj
T
stg
T
sold
184
74
-40…+175
-55…+150
260
W
W
°C
°C
°C
Power dissipation
T
C
= 100°C
Operating junction temperature
Storage temperature
Soldering temperature (wave soldering only
allowed at leads, 1.6 mm (0.063 in.) from case for
10s)
__________________________
1
2
Limited by T
j
=150°C.
t
p
limited T
j
=150°C.
3
Rev. 1.1., 2013-12-01
IPW35N65H / IPW35N65HFD
Electrical Characteristic, at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter break down
voltage
Temperature coeff. of BR voltage
Symbol
Conditions
Value
min. typ. max.
Unit
V
(BR)CES
V
GE
=0V, I
C
=0.2mA
650
-
-
0.47
-
-
V
V/°C
ΔV
(BR)CES
/ΔT
j
V
GE
=0V, I
C
=4mA
I
F
=17.5A
V
F
Diode forward voltage
T
vj
=25°C
T
vj
=100°C
T
vj
=150°C
-
-
-
3.2
1.38
1.36
1.33
4
1.75
-
-
4.8
V
Gate-emitter threshold voltage
V
GE(th)
I
C
=350A, V
CE
=V
GE
V
CE
=650V, V
GE
=0V
V
Zero gate voltage collector current
I
CES
T
j
=25°C
T
j
=150°C
-
-
-
-
-
0.26
-
47
0.035
-
100
-
mA
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=35A
nA
S
4
Rev. 1.1., 2013-12-01
IPW35N65H / IPW35N65HFD
Value
Parameter
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
1
energy related
Effective output capacitance, time
2
related
Energy stored in output
capacitance
Gate to source charge
Gate to drain charge
Gate charge total
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
ies
C
oes
C
res
C
o(er)
C
o(tr)
E
oss
Q
gs
Q
gd
Q
g
t
d(on)
t
r
t
d(off)
t
f
T
vj
=25°C, V
CC
=400V,
I
C
=17.5A,
V
GE
= 0.0/12.0V,
R
G
=7Ω
V
CC
= 520V, I
C
=35.0 A,
V
GE
= 12V
V
GS
=0V. V
CE
=0…520V
I
C
=constant, V
GS
=0V,
V
CE
=0…520V
V
CE
=400V, V
GE
=0V,
f=1MHz
V
CE
=25V, V
GE
=0V,
f=1MHz
Conditions
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
2000
50
9
35
40
2.8
11
22
63
18
6
77
15
max. Unit
-
-
-
pF
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
nC
µJ
__________________________
1
2
C
o(er)
is a fix capacitance that gives the same stored energy as
C
oss
while V
CE
is rising from 0 to 80% V
(BR)CES
C
o(tr)
is a fix capacitance that gives the same charging time as
C
oss
while V
CE
is rising from 0 to 80% V
(BR)CES
5
Rev. 1.1., 2013-12-01
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