Diodes - General Purpose, Power, Switching VR:80V,IO:125mA
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 0.72 V |
JESD-30 code | R-PBCC-N2 |
Maximum non-repetitive peak forward current | 1 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Maximum output current | 0.125 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | 260 |
Maximum power dissipation | 0.2 W |
Maximum repetitive peak reverse voltage | 100 V |
Maximum reverse recovery time | 0.009 µs |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
Base Number Matches | 1 |
CDSUR4448-HF | CDSUR4448 | |
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Description | Diodes - General Purpose, Power, Switching VR:80V,IO:125mA | Diodes - General Purpose, Power, Switching DFN 125mA 80V Sm Sgnl Switching |
Is it Rohs certified? | conform to | conform to |
Reach Compliance Code | compliant | compliant |
ECCN code | EAR99 | EAR99 |
Configuration | SINGLE | SINGLE |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 0.72 V | 0.72 V |
Maximum non-repetitive peak forward current | 1 A | 1 A |
Number of components | 1 | 1 |
Maximum operating temperature | 125 °C | 125 °C |
Maximum output current | 0.125 A | 0.125 A |
Maximum repetitive peak reverse voltage | 100 V | 100 V |
Maximum reverse recovery time | 0.009 µs | 0.009 µs |
surface mount | YES | YES |
Base Number Matches | 1 | 1 |