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CDSUR4448-HF

Description
Diodes - General Purpose, Power, Switching VR:80V,IO:125mA
CategoryDiscrete semiconductor    diode   
File Size118KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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CDSUR4448-HF Overview

Diodes - General Purpose, Power, Switching VR:80V,IO:125mA

CDSUR4448-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.72 V
JESD-30 codeR-PBCC-N2
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current0.125 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.009 µs
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Base Number Matches1

CDSUR4448-HF Related Products

CDSUR4448-HF CDSUR4448
Description Diodes - General Purpose, Power, Switching VR:80V,IO:125mA Diodes - General Purpose, Power, Switching DFN 125mA 80V Sm Sgnl Switching
Is it Rohs certified? conform to conform to
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.72 V 0.72 V
Maximum non-repetitive peak forward current 1 A 1 A
Number of components 1 1
Maximum operating temperature 125 °C 125 °C
Maximum output current 0.125 A 0.125 A
Maximum repetitive peak reverse voltage 100 V 100 V
Maximum reverse recovery time 0.009 µs 0.009 µs
surface mount YES YES
Base Number Matches 1 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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