NTGS3443T1 datasheet, PDF - EEWORLD Datasheet

NTGS3443T1: DescriptionMOSFET 20V 2A P-Channel; CategoryDiscrete semiconductor The transistor; File Size107KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MOSFET 20V 2A P-Channel

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TSOP
package instruction	MINIATURE, CASE 318G-02, TSOP-6
Contacts	6
Manufacturer packaging code	CASE 318G-02
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	2.2 A
Maximum drain current (ID)	2.2 A
Maximum drain-source on-resistance	0.065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn80Pb20)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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