IGBT
Highspeed5IGBTinTRENCHSTOP
TM
5technologycopackedwithRAPID2
fastandsoftantiparalleldiode
IKZ75N65NH5
650VDuoPackIGBTanddiode
Highspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKZ75N65NH5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOP
TM
5technologycopackedwithRAPID2
fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedH5technologyoffering
•UltralowlossswitchingthankstoKelvinemitterpinin
combinationwithTRENCHSTOP
TM
5
•Best-in-classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQ
G
•IGBTcopackedwithRAPID2fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
•Solarstringinverters
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
IKZ75N65NH5
V
CE
650V
I
C
75A
V
CEsat
,T
vj
=25°C
1.65V
T
vjmax
175°C
Marking
K75ENH5
Package
PG-TO247-4
2
Rev.2.1,2014-10-31
IKZ75N65NH5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.1,2014-10-31
IKZ75N65NH5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°Cvaluelimitedbybondwire
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax1)
Turn off safe operating area
V
CE
≤650V,T
vj
≤175°C,t
p
=1µs
1)
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°Cvaluelimitedbybondwire
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax1)
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
P
tot
T
vj
T
stg
Value
650
90.0
75.0
300.0
300.0
95.0
73.0
219.0
±20
±30
395.0
197.0
-40...+175
-55...+150
260
Unit
V
A
A
A
A
A
V
W
°C
°C
°C
Nm
M
0.6
Max.Value
Unit
R
th(j-c)
R
th(j-c)
R
th(j-a)
0.38
0.46
40
K/W
K/W
K/W
1)
Defined by design. Not subject to production test.
4
Rev.2.1,2014-10-31
IKZ75N65NH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=75.0A
T
vj
=25°C
T
vj
=100°C
T
vj
=150°C
V
GE
=0V,I
F
=75.0A
T
vj
=25°C
T
vj
=100°C
T
vj
=150°C
I
C
=0.75mA,V
CE
=V
GE
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=75.0A
650
-
-
-
-
-
-
3.2
-
-
-
-
-
1.65
1.82
1.90
1.60
1.65
1.65
4.0
-
2.10
-
-
2.20
-
-
4.8
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
µA
nA
S
-
75.0
3300.0
-
-
104.0
100
-
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
1)
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
CC
=520V,I
C
=75.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
4300
130
16
166.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=400V,I
C
=37.5A,
V
GE
=0.0/15.0V,
R
G(on)
=27.0Ω,R
G(off)
=22.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
52
19
412
19
0.88
0.52
1.40
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
1)
The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.2.1,2014-10-31
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