V10P10
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
MOS Barrier Schottky Rectifier Ultra Low
V
F
= 0.453 V at I
F
= 5 A
TMBS
®
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
Available
1
2
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
SMPC
(TO-277A)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 10 A
T
J
max.
Package
Diode variations
10 A
100 V
180 A
100 mJ
0.574 V
150 °C
TO-277A (SMPC)
Single die
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at I
AS
= 2.0 A, T
J
= 25 °C
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Operating junction temperature range
Storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
T
J (1)
T
STG
SYMBOL
V10P10
V1010
100
10
180
100
1.0
-40 to +175
-55 to +175
V
A
A
mJ
A
°C
°C
UNIT
Note
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
θJA
Revision: 23-Jun-17
Document Number: 89006
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V10P10
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1 mA
I
F
= 5 A
Instantaneous forward voltage
I
F
= 10 A
I
F
= 5 A
I
F
= 10 A
V
R
= 70 V
Reverse current
V
R
= 100 V
Notes
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
(3)
Pulse test: Pulse width
≤
40 ms
T
A
= 25 °C
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
V
BR
TYP.
100 (minimum)
0.512
0.625
0.453
0.574
7.1
4.5
30.4
10.4
MAX.
-
-
0.68
-
0.62
-
-
150
20
μA
mA
μA
mA
V
UNIT
V
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
SYMBOL
R
θJA
R
θJL
(1)
V10P10
60
3
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
V10P10-M3/86A
V10P10-M3/87A
V10P10HM3_A/H
(1)
V10P10HM3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
PACKAGE CODE
86A
87A
H
I
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 23-Jun-17
Document Number: 89006
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V10P10
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise specified)
12
Resistive or Inductive Load
100
Instantaneous Reverse Current (mA)
Average Forward Current (A)
10
T
J
= 150 °C
10
T
J
= 125 °C
8
1
6
0.1
T
J
= 25 °C
4
2
T
L
measured
at the Cathode Band Terminal
0.01
0
0
25
50
75
100
125
150
175
0.001
10
20
30
40
50
60
70
80
90
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
8
D = 0.3
7
D = 0.2
D = 0.1
D = 0.5 D = 0.8
10 000
6
5
4
3
2
1
0
0
1
D = 1.0
Junction Capacitance (pF)
12
Average Power Loss (W)
1000
T
D = t
p
/T
2
3
4
5
6
7
8
9
t
p
100
10 11
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
100
Instantaneous Forward Current (A)
Transient Thermal Impedance (°C/W)
Junction to Ambient
T
J
= 150 °C
10
T
J
= 125 °C
1
10
0.1
T
J
= 25 °C
T
J
= -40 °C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 23-Jun-17
Document Number: 89006
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V10P10
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMPC
(TO-277A)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 23-Jun-17
Document Number: 89006
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000