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V10P10-E3/87A

Description
Schottky Diodes & Rectifiers 10 Amp 100 Volt Single TrenchMOS
CategoryDiscrete semiconductor    diode   
File Size89KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

V10P10-E3/87A Overview

Schottky Diodes & Rectifiers 10 Amp 100 Volt Single TrenchMOS

V10P10-E3/87A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.62 V
Maximum non-repetitive peak forward current180 A
Number of components1
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage100 V
surface mountYES
technologySCHOTTKY
V10P10
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
MOS Barrier Schottky Rectifier Ultra Low
V
F
= 0.453 V at I
F
= 5 A
TMBS
®
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
Available
1
2
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
SMPC
(TO-277A)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 10 A
T
J
max.
Package
Diode variations
10 A
100 V
180 A
100 mJ
0.574 V
150 °C
TO-277A (SMPC)
Single die
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at I
AS
= 2.0 A, T
J
= 25 °C
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Operating junction temperature range
Storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
T
J (1)
T
STG
SYMBOL
V10P10
V1010
100
10
180
100
1.0
-40 to +175
-55 to +175
V
A
A
mJ
A
°C
°C
UNIT
Note
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
θJA
Revision: 23-Jun-17
Document Number: 89006
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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