MOSFET 60V 79A 8.4 mOhm Automotive MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | D2PAK-3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 16 weeks |
| Other features | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
| Avalanche Energy Efficiency Rating (Eas) | 88 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 79 A |
| Maximum drain current (ID) | 79 A |
| Maximum drain-source on-resistance | 0.0084 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 110 W |
| Maximum pulsed drain current (IDM) | 315 A |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| AUIRF1018ES | AUIRF1018ESTRL | |
|---|---|---|
| Description | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET |
| Is it Rohs certified? | conform to | conform to |
| package instruction | D2PAK-3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Factory Lead Time | 16 weeks | 16 weeks |
| Other features | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
| Avalanche Energy Efficiency Rating (Eas) | 88 mJ | 88 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | 60 V |
| Maximum drain current (Abs) (ID) | 79 A | 79 A |
| Maximum drain current (ID) | 79 A | 79 A |
| Maximum drain-source on-resistance | 0.0084 Ω | 0.0084 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-263AB |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 110 W | 110 W |
| Maximum pulsed drain current (IDM) | 315 A | 315 A |
| surface mount | YES | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 30 | 30 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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