BLA6H0912L-1000;
BLA6H0912LS-1000
LDMOS avionics power transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
1000W LDMOS pulsed power transistor intended for avionics transmitter applications in
the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and
TACAN.
Table 1.
Application information
Typical RF performance at T
case
= 25
C; t
p
= 50
s;
= 2 %; I
Dq
= 200 mA; in a class-AB application
circuit.
Test signal
pulsed RF
f
(MHz)
1030
V
DS
(V)
50
P
L
(W)
1000
G
p
(dB)
16
D
(%)
52
t
r
(ns)
11
t
f
(ns)
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (960 MHz to 1215 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME
and TACAN applications in the 960 MHz to 1215 MHz frequency range
BLA6H0912L(S)-1000
LDMOS avionics power transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLA6H0912L-1000 (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLA6H0912LS-1000 (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLA6H0912L-1000
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
BLA6H0912LS-1000 -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
100
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLA6H0912L-1000_0912LS-1000#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
2 of 13
BLA6H0912L(S)-1000
LDMOS avionics power transistor
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 80
C;
P
L
= 1000 W
t
p
= 50
s;
= 2 %
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 2.4 ms;
= 6.4 %
0.011 K/W
0.021 K/W
0.025 K/W
0.027 K/W
0.041 K/W
Typ
Unit
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 400 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 20 A
Min
104
1.25
-
-
-
-
-
Typ
-
1.8
-
62
-
34
75
Max Unit
-
2.8
-
280
-
-
V
A
A
nA
S
m
2.25 V
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 4 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 14 A
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 50
s;
= 2 %; RF performance at V
DS
= 50 V; I
Dq
= 200 mA;
f = 1030 MHz; T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
V
DS
G
p
RL
in
D
P
droop(pulse)
t
r
t
f
Parameter
drain-source voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
Conditions
P
L
= 1000 W
P
L
= 1000 W
P
L
= 1000 W
P
L
= 1000 W
P
L
= 1000 W
P
L
= 1000 W
P
L
= 1000 W
Min
-
14
-
47
-
-
-
Typ
-
15.5
19
51
0
11
5
Max
50
-
11
-
0.3
30
30
Unit
V
dB
dB
%
dB
ns
ns
7. Test information
7.1 Ruggedness in class-AB operation
The BLA6H0912L-1000 and the BLA6H0912LS-1000 are capable of withstanding a load
mismatch corresponding to VSWR = 3 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 200 mA; P
L
= 1000 W; t
p
= 50
s;
= 2 %; f = 1030 MHz.
BLA6H0912L-1000_0912LS-1000#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
3 of 13
BLA6H0912L(S)-1000
LDMOS avionics power transistor
7.2 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
(MHz)
950
1000
1050
1100
1150
1200
[1]
[2]
Z
S
()
1.12
j2.27
1.39
j2.69
1.79
j2.79
2.44
j2.72
1.68
j2.52
4.68
j2.97
Z
L
[1]
()
0.60 + j0.21
0.54 + j0.08
0.40 + j0.03
0.41
j0.12
0.49
j0.21
0.36
j0.30
Z
L
[2]
()
0.62
j0.02
0.66
j0.06
0.52
j0.28
0.67
j0.29
0.53
j0.35
0.57
j0.40
Optimized for drain efficiency.
Optimized for power gain.
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLA6H0912L-1000_0912LS-1000#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
4 of 13
BLA6H0912L(S)-1000
LDMOS avionics power transistor
7.3 Circuit information
50 mm
50 mm
R3
C22
R1
C23
C4
C10
C11
C14
C5
C27
C8
+
R5
C2
C1
60 mm
C3
C28
C6
C19
C26
R2
C25
R4
aaa-009717
C7
C16
C17
Printed-Circuit Board (PCB) material: Rogers Duroid 6002 with
r
= 2.94 and
thickness = 0.762 mm.
See
Table 9
for list of components.
Fig 2.
Component layout
Table 9.
List of components
See
Figure 2
for component layout.
Component
C1, C4, C7, C8, C22, C25
C2, C3, C27, C28
C5, C6
C23, C26
C10, C16
C11, C17
C14
C19
R1
R2
R3, R4
R5
[1]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
SMD resistor
SMD resistor
SMD resistor
current sense resistor
Value
33 pF
6.2 pF
3.9 pF
1 nF
10 nF
100 nF
220
F,
63 V
10
F,
100 V
1 k
20
2.4
0.005
[1]
[1]
[1]
[1]
Remarks
Murata
TDK
SMD 0603
SMD 0603
SMD 0603
American Technical Ceramics type 100B or capacitor of same quality.
BLA6H0912L-1000_0912LS-1000#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
5 of 13
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