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SI7463ADP-T1-GE3

Description
MOSFET -40V Vds 20V Vgs PowerPAK SO-8
CategoryDiscrete semiconductor    The transistor   
File Size353KB,13 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MOSFET -40V Vds 20V Vgs PowerPAK SO-8

SI7463ADP-T1-GE3 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-XDSO-C5
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)45 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)46 A
Maximum drain current (ID)46 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-C5
JESD-609 codee3
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)39 W
Maximum pulsed drain current (IDM)70 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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