EEWORLDEEWORLDEEWORLD

Part Number

Search

BCP56-16T1

Description
Bipolar Transistors - BJT 1A 100V NPN
CategoryDiscrete semiconductor    The transistor   
File Size148KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

BCP56-16T1 Online Shopping

Suppliers Part Number Price MOQ In stock  
BCP56-16T1 - - View Buy Now

BCP56-16T1 Overview

Bipolar Transistors - BJT 1A 100V NPN

BCP56-16T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-261AA
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Manufacturer packaging codeCASE 318E-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
http://onsemi.com
High Current: 1.0 A
The SOT−223 package can be soldered using wave or reflow. The
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1 to Order the 7 inch/1000 Unit Reel
Use BCP56T3 to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
4
1
2
3
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
80
100
5
1
1.5
12
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
W
mW/°C
°C
1
Symbol
R
qJA
Max
83.3
Unit
°C/W
xx
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
T
J
, T
stg
AYW
xxxxxG
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 8
1
Publication Order Number:
BCP56T1/D

BCP56-16T1 Related Products

BCP56-16T1 BCP56T1 BCP56-16T3 BCP56T3
Description Bipolar Transistors - BJT 1A 100V NPN Bipolar Transistors - BJT 1A 100V NPN Bipolar Transistors - BJT 1A 100V NPN Bipolar Transistors - BJT 1A 100V NPN
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-261AA TO-261AA TO-261AA TO-261AA
package instruction SMALL OUTLINE, R-PDSO-G4 CASE 318E-04, 4 PIN SMALL OUTLINE, R-PDSO-G4 CASE 318E-04, 4 PIN
Contacts 4 4 4 4
Manufacturer packaging code CASE 318E-04 CASE 318E-04 CASE 318E-04 CASE 318E-04
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 40 100 40
JEDEC-95 code TO-261AA TO-261AA TO-261AA TO-261AA
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0 e0 e0
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245 235 240 240
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 130 MHz 130 MHz 130 MHz 130 MHz

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号