STB27NM60ND datasheet, PDF - EEWORLD Datasheet

STB27NM60ND: DescriptionMOSFET N-Ch Power Mosfet 600V STripFET D2PAK; Categorysemiconductor Discrete semiconductor; File Size898KB，19 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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MOSFET N-Ch Power Mosfet 600V STripFET D2PAK

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	21 A
Rds On - Drain-Source Resistance	130 mOhms
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	80 nC
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	160 W
Channel Mode	Enhancement
Qualification	AEC-Q100
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Transistor Type	1 N-Channel
Forward Transconductance - Min	17 S
Fall Time	40 ns
Rise Time	30 ns
Factory Pack Quantity	1000
Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	60 ns
Unit Weight	0.139332 oz

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