Freescale Semiconductor
Technical Data
Document Number: MMG3H21NT1
Rev. 3, 9/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3H21NT1 is a general purpose amplifier that is internally input
matched and internally output matched. It is designed for a broad range of
Class A, small--signal, high linearity, general purpose applications. It is
suitable for applications with frequencies from 0 to 6000 MHz such as
cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small--signal RF.
Features
Frequency: 0--6000 MHz
P1dB: 20.5 dBm @ 900 MHz
Small--Signal Gain: 19.3 dB @ 900 MHz
Third Order Output Intercept Point: 37 dBm @ 900 MHz
Single 5 V Supply
Active Bias
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
MMG3H21NT1
0-
-6000 MHz, 19.3 dB
20.5 dBm
InGaP HBT GPA
SOT-
-89
Table 1. Typical Performance
(1)
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1dB
OIP3
900
MHz
19.3
--18
--10
20.5
37
2140
MHz
16
--25
--6
19.8
34
3500
MHz
14
--20
--8
17.7
31
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
7
300
12
--65 to +150
175
Unit
V
mA
dBm
C
C
1. V
CC
= 5 Vdc, T
A
= 25C, 50 ohm system, in Freescale
application circuit.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 84C, 5 Vdc, 90 mA, no RF applied
Symbol
R
JC
Value
(2)
38.6
Unit
C/W
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2008, 2011--2012, 2014. All rights reserved.
MMG3H21NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(V
CC
= 5 Vdc, 900 MHz, T
A
= 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
Supply Current
Supply Voltage
Symbol
G
p
IRL
ORL
P1dB
OIP3
NF
I
CC
V
CC
Min
18.3
—
—
—
—
—
75
—
Typ
19.3
--18
--10
20.5
37
5.5
90
5
Max
—
—
—
—
—
—
110
—
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Table 5. Functional Pin Description
Pin
Number
1
2
3
RF
in
Ground
RF
out
/DC Supply
1
2
3
2
Pin Function
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Class
1C
A
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
1
Package Peak Temperature
260
Unit
C
MMG3H21NT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
25
G
p
, SMALL--SIGNAL GAIN (dB)
0
S22
20
S11, S22 (dB)
--10
15
T
C
= --40C
85C
--20
S11
V
CC
= 5 Vdc
--40
10
V
CC
= 5 Vdc
5
0
1
2
f, FREQUENCY (GHz)
3
25C
--30
4
0
1
2
f, FREQUENCY (GHz)
3
4
Figure 2. Small-
-Signal Gain (S21) versus
Frequency
23
21
G
p
, SMALL--SIGNAL GAIN (dB)
19
17
15
13
11
9
8
10
12
14
16
18
20
22
P
out
, OUTPUT POWER (dBm)
3500 MHz
2600 MHz
2140 MHz
900 MHz
1960 MHz
P1dB, 1 dB COMPRESSION POINT (dBm)
V
CC
= 5 Vdc
21
Figure 3. Input/Output Return Loss versus
Frequency
20
19
18
V
CC
= 5 Vdc
17
0.5
1
1.5
2
2.5
3
3.5
f, FREQUENCY (GHz)
Figure 4. Small-
-Signal Gain versus Output
Power
160
I
CC
, COLLECTOR CURRENT (mA)
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
38
37
36
35
34
33
32
31
30
0
Figure 5. P1dB versus Frequency
V
CC
= 5 Vdc
1 MHz Tone Spacing
1
2
f, FREQUENCY (GHz)
3
4
V
CC
, COLLECTOR VOLTAGE (V)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3H21NT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
38
37
36
35
34
33
32
4.5
f = 900 MHz
1 MHz Tone Spacing
4.7
4.9
5.1
5.3
5.5
39
38
37
36
35
--40
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--20
0
20
40
60
80
100
V
CC
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
--30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--40
--50
--60
--70
--80
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
10
3
5
7
9
11
13
15
17
19
120
MTTF (YEARS)
10
5
Figure 9. Third Order Output Intercept Point
versus Case Temperature
10
4
125
130
135
140
145
150
P
out
, OUTPUT POWER (dBm)
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
CC
= 5 Vdc, I
CC
= 90 mA
Figure 10. Third Order Intermodulation versus
Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
--20
--30
--40
--50
--60
--70
8
Figure 11. MTTF versus Junction Temperature
10
8
NF, NOISE FIGURE (dB)
6
4
2
V
CC
= 5 Vdc
0
0
1
2
f, FREQUENCY (GHz)
3
4
V
CC
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
10
12
14
16
18
20
P
out
, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single-
-Carrier W-
-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3H21NT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 30-
-300 MHz
V
SUPPLY
R1
C3
L1
RF
INPUT
Z1
C1
Z2
DUT
V
CC
Z3
Z4
C2
C4
RF
OUTPUT
Z5
Z1, Z5
Z2
Z3
0.347 x 0.058 Microstrip
0.575 x 0.058 Microstrip
0.172 x 0.058 Microstrip
Z4
PCB
0.403 x 0.058 Microstrip
Getek Grade ML200C, 0.031,
r
= 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30
20
S21, S11, S22 (dB)
10
0
--10
--20
S11
--30
0
100
200
300
400
500
MMG30XX
Rev 2
f, FREQUENCY (MHz)
V
CC
= 5 Vdc
C1
L1
S21
R1
C4
C3
C2
S22
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
C1, C2, C3
C4
L1
R1
Description
0.1
F
Chip Capacitors
1
F
Chip Capacitor
470 nH Chip Inductor
0
Chip Resistor
Part Number
C0603C104J5RAC
C0603C105J5RAC
BK2125HM471--T
ERJ3GEY0R00V
Manufacturer
Kemet
Kemet
Taiyo Yuden
Panasonic
MMG3H21NT1
RF Device Data
Freescale Semiconductor, Inc.
5
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