Features
•
•
•
•
•
•
•
•
•
Frequency Range 2.4 GHz to 2.5 GHz
Supply Voltage 2.7V to 3.6V
32 dB Power Gain
23 dBm Linear Output Power for IEEE 802.11b Mode Operation
EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation
On-chip Power Detector with 20 dB Dynamic Range
Power-down Mode and Biasing Control
Input and Interstage Matching Fully On-chip
Low Profile Lead-free Plastic Package QFN16 (3 mm
×
3 mm
×
0.9 mm)
Applications
•
•
•
•
•
IEEE 802.11b DSSS WLAN
IEEE 802.11g OFDM WLAN
Bluetooth 2.0 Enhanced Data Rate
PC Cards, PCMCIA, Access Points
2.4 GHz ISM Band Application
High Gain
Power Amplifier
for 802.11b/g
WLAN Systems
ATR7032
1. Description
This power amplifier (PA) is designed for high-performance 802.11b and 802.11g
multi-mode applications such as Mini PCI and PCMCIA for portable devices and
access points. The low profile plastic package with internal input matching to 50Ω and
on-chip interstage matching minimizes the PCB board-space and allows simplified
integration with very few passive components. The on-chip power detector provides a
voltage linear to the output power, while the standby/bias control logic provides
power-saving and shutdown options. The PA is realized as a three stage PA with
internal interstage matching and an open-collector output structure.
The power amplifier is designed using Atmel
®
’s Silicon-Germanium (SiGe2) process
and provides excellent linearity and noise performance, high gain, and good
power-added efficiency.
4846D–WLAN–10/07
Figure 1-1.
Block Diagram
V_PA2
NC
NC
9
IC
12
ATR7032
14
8
RF_OUT
15
RF_IN
50Ω input
matching
Interstage
matching
Interstage
matching
7
13
V_PA1
11
10
GND_RF
RF_OUT
6
IC
16
5
RF_OUT
Paddle
GND_RF
Standby/
Bias
circuitry
1
VCTRL
VCC
2
GND_VCC
3
VDET
Voltage
detector
4
RF_OUT
2
ATR7032
4846D–WLAN–10/07
ATR7032
2. Pin Configuration
Figure 2-1.
Pinning QFN16
IC
RF_IN
GND
V_PA1
VCTRL
VCC
GND_VCC
VDET
1
2
3
4
16 15 14 13
12
ATR7032 11
GND on the
10
PADDLE
9
5 6 7 8
IC
V_PA2
NC
NC
Table 2-1.
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PADDLE
Pin Description
Symbol
VCTRL
VCC
GND_VCC
VDET
RF_OUT
RF_OUT
RF_OUT
RF_OUT
NC
NC
V_PA2
IC
V_PA1
GND
RF_IN
IC
GND
Function
Power-up/biasing control voltage
Supply voltage
Ground
Power detector voltage
RF output
RF output
RF output
RF output
Not connected
Not connected
Supply voltage PA stage 2
Internally connected, on-chip matching; must not be externally connected
Supply voltage PA stage 1
Ground
RF input
Internally connected, on-chip matching; must not be externally connected
Ground on the PADDLE
RF_OUT
RF_OUT
RF_OUT
RF_OUT
3
4846D–WLAN–10/07
3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Supply voltage
Supply current
Junction temperature
Storage temperature
Input RF power
Control voltage power
up/down and biasing
Test Conditions
Without RF
Symbol
V
CC
I
CC
T
j
T
Stg
P
IN
V
VCTRL
Value
5
600
150
–40 to +125
12
0 to +3.0
500
Unit
V
mA
°C
°C
dBm
V
V
ESD protection, all pins
EIA/JESD22-A114-B
V
ESD
Note:
1. The part may not survive all maximums applied simultaneously.
4. Operating Range
Parameters
Supply voltage range
Ambient temperature range
Frequency range
Symbol
V
CC
T
amb
f
Value
2.7 to 3.6
–40 to +85
2400 to 2500
Unit
V
°C
MHz
5. Electrical Characteristics
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25°C
No.
1.0
1.1
1.2
1.3
1.4
Current consumption
Parameters
Control voltage range
Test Conditions
PA operating mode
Power down mode
Quiescent
Power down mode
PA operating mode
Pin
Symbol
V
VCTRL
V
VCTRL
I
CC_Q
I
CC_PD
I
VCTRL
90
10
100
Min.
1
Typ.
Max.
2
0.2
mA
µA
µA
Unit
V
Type*
A
A
A
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
ATR7032
4846D–WLAN–10/07
ATR7032
6. Electrical Characteristics – Unmodulated Carrier
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25°C
No.
2.0
2.1
2.2
2.3
Parameters
P1dB output power
Harmonic rejection
Small signal gain
P
OUT
= 23 dBm
I
CC_Q
, small signal
condition
2.4 to 2.5 GHz, I
CC_Q
,
small signal condition
–40 to +85°C, I
CC_Q
,
small signal condition
I
CC_Q
, small signal
condition
I
CC_Q
, small signal
condition
I
CC_Q
, small signal
condition, with external
matching
Test Conditions
Pin
Symbol
P
SAT
P1dB
2fout
3fout
GL
G
varfreq
G
vartemp
ISOr
VSWR
IN
VSWR
OUT
Min.
Typ.
28.5
27
–45
–30
32
±1.5
±1.5
40
2:1
Max.
Unit
dBm
dBm
dBc
dBc
dB
dB
dB
dB
Type*
C
A
C
C
A
C
C
C
C
Saturated output power For reference
2.4
Gain variation
2.5
2.6
Reverse isolation
Input 50Ω VSWR
2.7
Output 50Ω VSWR
2:1
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
7. Electrical Characteristics – 11 Mbps CCK Modulation
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25°C,
11 Mbps CCK modulation with Gaussian transmit filtering of BT = 0.4, conforming to IEEE 802.11b
No.
3.0
3.1
3.2
Parameters
Maximum linear
output power
Linear power gain
Current consumption
Test Conditions
ACPR1
≥
33 dBc,
ACPR2
≥
55 dBc
P
OUT
= 23 dBm
P
OUT
= 23 dBm
Pin
Symbol
P
LIN
GL
I
CC
Min.
Typ.
23
32
220
Max.
Unit
dBm
dB
mA
Type*
C
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
8. Electrical Characteristics – 54 Mbps OFDM Modulation
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25°C,
54 Mbps OFDM modulation, conforming to IEEE 802.11g; 0.7% EVM measurement equipment noise floor is included in the EVM
measurement result.
No.
4.0
4.1
4.2
Parameters
Error vector
magnitude
Linear power gain
Current consumption
Test Conditions
P
OUT
= 19 dBm
P
OUT
= 19 dBm
P
OUT
= 19 dBm
Pin
Symbol
EVM
GL
I
CC
Min.
Typ.
2.0
32
150
Max.
Unit
%
dB
mA
Type*
C
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
4846D–WLAN–10/07
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