SS8550B datasheet, PDF - EEWORLD Datasheet

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SS8550B: DescriptionRF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size38KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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SS8550B Overview

RF SMALL SIGNAL TRANSISTOR

SS8550B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	85
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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SS8550

2W Output Amplifier of Portable Radios in

Class B Push-pull Operation.

• Complimentary to SS8050

• Collector Current: I

=1.5A

• Collector Power Dissipation: P

=2W (T

=25°C)

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Ratings

-40

-25

-6

-1.5

150

-65 ~ 150

Units

°C

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

CBO

EBO

FE1

FE2

FE3

(sat)

(on)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Test Condition

= -100µA, I

= -2mA, I

= -100µA, I

= -35V, I

= -6V, I

= -1V, I

= -5mA

= -1V, I

= -100mA

= -1V, I

= -800mA

= -800mA, I

= -80mA

= -800mA, I

= -80mA

= -1V, I

= -10mA

= -10V, I

f=1MHz

= -10V, I

= -50mA

100

170

160

-0.28

-0.98

-0.66

200

Min.

-40

-25

-6

-100

300

-0.5

-1.2

-1.0

MHz

Typ.

Max.

Units

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

Output Capacitance

Current Gain Bandwidth Product

Classification

FE2

85 ~ 160

120 ~ 200

160 ~ 300

Rev. A2, November 2002

SS8550B Related Products

	SS8550B	SS8550C	VN66AFD	SS8550
Description	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	VN66 SERIES	RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	incompatible	incompatible	-	incompatible
Maker	Fairchild	Fairchild	-	Fairchild
Parts packaging code	TO-92	TO-92	-	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	-	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	-	3
Reach Compliance Code	unknow	unknow	-	unknow
ECCN code	EAR99	EAR99	-	EAR99
Maximum collector current (IC)	1.5 A	1.5 A	-	1.5 A
Collector-emitter maximum voltage	25 V	25 V	-	25 V
Configuration	SINGLE	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	85	120	-	40
JEDEC-95 code	TO-92	TO-92	-	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	-	O-PBCY-T3
JESD-609 code	e0	e0	-	e0
Number of components	1	1	-	1
Number of terminals	3	3	-	3
Maximum operating temperature	150 °C	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	ROUND	ROUND	-	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	PNP	PNP	-	PNP
Maximum power dissipation(Abs)	1 W	1 W	-	1 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified
surface mount	NO	NO	-	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	-	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	-	AMPLIFIER
Transistor component materials	SILICON	SILICON	-	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	-	200 MHz

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