K4S640832E-TC1H datasheet, PDF

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K4S640832E-TC1H: Description64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL; Categorystorage storage; File Size86KB，10 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S640832E-TC1H Overview

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

K4S640832E-TC1H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	compli
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
length	22.22 mm
memory density	67108864 bi
Memory IC Type	SYNCHRONOUS DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.125 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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K4S640832E

CMOS SDRAM

64Mbit SDRAM

2M x 8Bit x 4 Banks

Synchronous DRAM

LVTTL

Revision 0.1

Sept. 2001

* Samsung Electronics reserves the right to change products or specification without notice.

Rev.0.1 Sept. 2001

K4S640832E-TC1H Related Products

	K4S640832E-TC1H	K4S640832E-TC1L	K4S640832E-TL1H	K4S640832E-TL1L	K4S640832E
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	-
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	-
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2	-
package instruction	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	-
Contacts	54	54	54	54	-
Reach Compliance Code	compli	compli	compli	compli	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-
Maximum access time	6 ns	6 ns	6 ns	6 ns	-
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz	-
I/O type	COMMON	COMMON	COMMON	COMMON	-
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	-
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	-
JESD-609 code	e0	e0	e0	e0	-
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	-
memory density	67108864 bi	67108864 bi	67108864 bi	67108864 bi	-
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-
memory width	8	8	8	8	-
Number of functions	1	1	1	1	-
Number of ports	1	1	1	1	-
Number of terminals	54	54	54	54	-
word count	8388608 words	8388608 words	8388608 words	8388608 words	-
character code	8000000	8000000	8000000	8000000	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	-
organize	8MX8	8MX8	8MX8	8MX8	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	-
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
power supply	3.3 V	3.3 V	3.3 V	3.3 V	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
refresh cycle	4096	4096	4096	4096	-
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-
self refresh	YES	YES	YES	YES	-
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	-
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	-
Maximum slew rate	0.125 mA	0.125 mA	0.125 mA	0.125 mA	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	-
surface mount	YES	YES	YES	YES	-
technology	CMOS	CMOS	CMOS	CMOS	-
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-
Terminal location	DUAL	DUAL	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	-

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