GS8160E36T-200I datasheet, PDF

GS8160E36T-200I: Description1M x 18, 512K x 36 18Mb Sync Burst SRAMs; Categorystorage storage; File Size439KB，25 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS8160E36T-200I Overview

1M x 18, 512K x 36 18Mb Sync Burst SRAMs

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	QFP
package instruction	LQFP, QFP100,.63X.87
Contacts	100
Reach Compliance Code	unknow
ECCN code	3A991.B.2.B
Maximum access time	6.5 ns
Other features	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
length	20 mm
memory density	18874368 bi
Memory IC Type	CACHE SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	100
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
power supply	2.5/3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.03 A
Minimum standby current	2.3 V
Maximum slew rate	0.25 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm

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