EEWORLDEEWORLDEEWORLD

Part Number

Search

STW25N95K3

Description
MOSFET N-Ch 950V 0.32 Ohm 22A SuperMESH 3
CategoryDiscrete semiconductor    The transistor   
File Size763KB,13 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

STW25N95K3 Online Shopping

Suppliers Part Number Price MOQ In stock  
STW25N95K3 - - View Buy Now

STW25N95K3 Overview

MOSFET N-Ch 950V 0.32 Ohm 22A SuperMESH 3

STW25N95K3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-247
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
Samacsys DescriptionSTW25N95K3 N-Channel MOSFET, 22 A, 950 V MDmesh K3, SuperMESH3, 3-Pin TO-247 STMicroelectronics
Avalanche Energy Efficiency Rating (Eas)450 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage950 V
Maximum drain current (Abs) (ID)22 A
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.36 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)400 W
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
STW25N95K3
N-channel 950 V, 0.32
Ω
22 A, TO-247
,
SuperMESH3™ Power MOSFET
Features
Type
STW25N95K3
V
DSS
950 V
R
DS(on)
max
< 0.36
Ω
I
D
Pw
22 A 400 W
100% avalanche tested
Extremely large avalanche performance
Gate charge minimized
Very low intrinsic capacitances
Zener-protected
TO-247
2
1
3
Application
Switching applications
Figure 1.
Internal schematic diagram
D(2)
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Marking
25N95K3
Package
TO-247
Packaging
Tube
Order code
STW25N95K3
January 2012
Doc ID 15584 Rev 2
1/13
www.st.com
13
Six things girls like about boys
1. Girls like handsome boys, but don't pretend to be cool. 2. Girls like the action of boys taking out their wallets, it's very graceful. 3. Girls like boys to say "I love you", but don't be too hypoc...
rain Talking
AD835 frequency multiplication problem
Use the ad835 multiplier to achieve frequency doubling, W=XY, Z is grounded, X, Y are connected together to a 1.8V vpp 100KHZ sine wave, theoretically it should output a 200KHZ sine wave plus a DC com...
Daisyduxy ADI Reference Circuit
Ultra-lightweight open source GUI, about 4,000 lines of effective code, extremely easy to port
Open source small GUI, only two files are needed, gui.c and gui.h1. Resource requirements Estimated minimum hardware requirements:ROM 13KRAM 2K2. Open source addressOpen source GUI addresshttps://gith...
LONGSHEN1 Embedded System
[ESP32-Audio-Kit Audio Development Board] - 0: Build the development environment
It turns out that setting up the software environment for ESP32 is a challenge.According to Espressif's official statement, there are two versions of ESP IDE. If you are not doing audio AI, use ESP-ID...
MianQi RF/Wirelessly
Dot matrix display design based on msp430
The microcontroller used is TI's Launchpad msp430, the dot matrix is 8*8, and the driver chip is two 74HC595;#includemsp430.hconst unsigned char tab[]={0xfe,0xfd,0xfb,0xf7,0xef,0xdf,0xbf,0x7f};const u...
火辣西米秀 Microcontroller MCU
The largest semiconductor deal in history is born! $40 billion acquisition of ARM
On September 14, NVIDIA officially announced that it would spend $40 billion (stock and cash) to acquire ARM to build the world's top computing company in the AI era. The core information is as follow...
eric_wang Talking

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号