SI7405BDN-T1-E3 datasheet, PDF

SI7405BDN-T1-E3: DescriptionMOSFET -12V Vds 8V Vgs PowerPAK 1212-8; CategoryDiscrete semiconductor The transistor; File Size575KB，13 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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MOSFET -12V Vds 8V Vgs PowerPAK 1212-8

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	SMALL OUTLINE, S-XDSO-C5
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (Abs) (ID)	16 A
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.013 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XDSO-C5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	33 W
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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