MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Infineon |
package instruction | LEAD FREE, MICRO-3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Factory Lead Time | 15 weeks |
Samacsys Description | MOSFET P-Ch 30V 3A HEXFET Low Ron Micro3 Infineon IRLML5203TRPBF P-channel MOSFET Transistor, 3 A, 30 V, 3-Pin SOT-23 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (Abs) (ID) | 3 A |
Maximum drain current (ID) | 3 A |
Maximum drain-source on-resistance | 0.098 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 1.25 W |
Maximum pulsed drain current (IDM) | 24 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |