GS8321E18E-250IV datasheet, PDF

GS8321E18E-250IV: Description2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs; Categorystorage storage; File Size728KB，31 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS8321E18E-250IV Overview

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	compli
ECCN code	3A991.B.2.B
Maximum access time	5.5 ns
Other features	PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 code	R-PBGA-B165
length	17 mm
memory density	37748736 bi
Memory IC Type	CACHE SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX18
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm

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