2STR2215 datasheet, PDF - EEWORLD Datasheet

2STR2215: DescriptionBipolar Transistors - BJT Lo Vltg FAST SWITCH Hi GAIN PNP; CategoryDiscrete semiconductor The transistor; File Size166KB，9 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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Bipolar Transistors - BJT Lo Vltg FAST SWITCH Hi GAIN PNP

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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