FDB024N08BL7 datasheet, PDF - EEWORLD Datasheet

FDB024N08BL7: DescriptionMOSFET 80V N-Channel PowerTrench MOSFET; CategoryDiscrete semiconductor The transistor; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MOSFET 80V N-Channel PowerTrench MOSFET

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-G6
Manufacturer packaging code	418AY
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	26 weeks
Avalanche Energy Efficiency Rating (Eas)	917 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	120 A
Maximum drain current (ID)	120 A
Maximum drain-source on-resistance	0.0024 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263CB
JESD-30 code	R-PSSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	246 W
Maximum pulsed drain current (IDM)	916 A
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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