Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
S
1
G
Top View
Marking code:
7K
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
Q
g
typ. (nC)
I
D
(mA)
Configuration
60
2
0.4
300
Single
BENEFITS
•
•
•
•
•
Low offset voltage
Low voltage operation
Easily driven without buffer
High speed circuits
Low error voltage
D
APPLICATIONS
• Direct logic-level interface: TTL/CMOS
• Drivers:
relays, solenoids, lamps, hammers,
display, memories, transistors, etc.
• Battery operated systems
• Solid state relays
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
SOT-23
2N7002K-T1-E3
2N7002K-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
b
Pulsed drain current
a
Power dissipation
b
Maximum junction-to-ambient
b
Operating junction and storage temperature range
Notes
a. Pulse width limited by maximum junction temperature
b. Surface mounted on FR4 board
S17-1299-Rev. F, 21-Aug-17
Document Number: 71333
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T
A
= 25 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J,
T
stg
LIMIT
60
± 20
300
190
800
0.35
0.14
350
-55 to +150
W
°C/W
°C
mA
UNIT
V
2N7002K
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate-threshold voltage
V
DS
V
GS(th)
V
GS
= 0 V, I
D
= 10 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 15 V
Gate-body leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 10 V
V
DS
= 0 V, V
GS
= ± 10 V, T
J
= 85 °C
V
DS
= 0 V, V
GS
= ± 5 V
Zero gate voltage drain current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V, V
DS
= 7.5 V
V
GS
= 4.5 V, V
DS
= 10 V
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 200 mA
V
DS
= 10 V, I
D
= 200 mA
I
S
= 200 mA, V
GS
= 0 V
60
1
-
-
-
-
-
-
-
800
500
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
± 10
1
± 150
± 1000
± 100
1
500
-
-
2
4
-
1.3
μA
nA
V
SYMBOL
TEST CONDITIONS
LIMITS
MIN.
TYP.
a
MAX.
UNIT
μA
On-state drain current
b
I
D(on)
mA
mS
V
Drain-source on-resistance
b
Forward transconductance
b
Diode forward voltage
Dynamic
a, b
Total gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
a, c
Turn-on time
Turn-off time
R
DS(on)
g
fs
V
SD
Q
g
C
iss
C
oss
C
rss
V
DS
= 10 V, V
GS
= 4.5 V
I
D
250 mA
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
-
-
-
-
0.4
30
6
2.5
0.6
-
-
-
nC
pF
t
d(on)
t
d(off)
V
DD
= 30 V, R
L
= 150
I
D
200 mA, V
GEN
= 10 V, R
g
= 10
-
-
-
-
25
35
ns
Notes
a. For DESIGN AID ONLY, not subject to production testing
b. Pulse test: pulse width
300 μs duty cycle
2 %
c. Switching time is essentially independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1299-Rev. F, 21-Aug-17
Document Number: 71333
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2N7002K
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.0
V
GS
= 10 V
0.8
I
D
- Drain Current (A)
Vishay Siliconix
7V 6V
5V
I
D
- Drain Current (mA)
1200
T
J
= - 55 °C
900
25 °C
125 °C
600
0.6
0.4
4V
300
0.2
3V
0.0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
6
Output Characteristics
Transfer Characteristics
4.0
3.5
R
DS(on)
- On-Resistance ()
40
V
GS
= 0 V
32
3.0
2.5
2.0
1.5
1.0
8
C - Capacitance (pF)
24
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
16
C
oss
C
rss
0
0.5
0.0
0
200
400
600
800
1000
I
D
- Drain Current (mA)
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7
6
5
4
3
2
1
0
0.0
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 10 V
I
D
= 250 mA
2.0
V
GS
= 10 V at 500 mA
1.6
V
GS
- Gate-to-Source Voltage (V)
1.2
V
GS
= 4.5 V
at 200 mA
0.8
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.0
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S17-1299-Rev. F, 21-Aug-17
Document Number: 71333
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2N7002K
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
V
GS
= 0 V
R
DS(on)
- On-Resistance ()
Vishay Siliconix
5
4
I
S
- Source Current (A)
100
T
J
= 125 °C
3
I
D
= 200 mA
2
I
D
= 500 mA
10
T
J
= 25 °C
T
J
= - 55 °C
1
1
0.0
0
0.3
0.6
0.9
1.2
1.5
0
2
V
SD
- Source-to-Drain Voltage (V)
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.4
3
2.5
I
D
= 250 µA
0.2
V
GS(th)
Variance (V)
0.0
Power (W)
2
- 0.2
1.5
- 0.4
1
T
A
= 25 °C
- 0.6
0.5
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
600
T
J
- Junction Temperature (°C)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
S17-1299-Rev. F, 21-Aug-17
Document Number: 71333
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71333.
S17-1299-Rev. F, 21-Aug-17
Document Number: 71333
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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