TRENCHSTOP™ Series
IKW75N60T
q
Low Loss DuoPack : IGBT in
TRENCHSTOP™
and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Positive temperature coefficient in V
CE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC
1)
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
G
E
PG-TO247-3
Applications:
Frequency Converters
Uninterrupted Power Supply
Type
IKW75N60T
V
CE
600V
I
C
75A
V
CE(sat),Tj=25°C
1.5V
T
j,max
175C
Marking
K75T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage,
T
j
≥ 25C
DC collector current, limited by
T
jmax
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
= 600V,
T
j
= 175C,
t
p
= 1µs
Diode forward current, limited by
T
jmax
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
3)
Symbol
V
CE
T
C
= 25C
T
C
= 100C
I
C
I
Cpul s
-
I
F
I
Fpul s
V
GE
t
SC
P
tot
T
j
T
stg
T
sold
T
C
= 25C
T
C
= 100C
Value
600
80
2)
Unit
V
75
225
225
80
2)
A
75
225
20
5
428
-40...+175
-55...+150
260
C
V
s
W
V
GE
= 15V,
V
CC
400V,
T
j
150C
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
2)
J-STD-020 and JESD-022
Value limited by bondwire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 2013-12-05
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 0 .2m A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 75 A
T
j
=2 5
C
T
j
=1 7 5 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 7 5 A
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 1. 2m A,
V
C E
=
V
G E
V
C E
= 60 0 V
,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Allowed number of short circuits: <1000; time
between short circuits: >1s.
IKW75N60T
q
Max. Value
Unit
Symbol
Conditions
R
thJC
R
thJCD
R
thJA
0.35
0.6
40
K/W
Symbol
Conditions
Value
min.
600
-
-
-
-
4.1
Typ.
-
1.5
1.9
1.65
1.6
4.9
max.
-
2.0
-
2.0
-
5.7
Unit
V
µA
-
-
-
-
-
-
-
41
-
40
5000
100
-
nA
S
Ω
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 75 A
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=7 5 A
V
G E
= 15 V
-
-
-
-
-
4620
288
137
470
13
690
-
-
-
-
-
-
pF
nC
nH
A
V
G E
= 15 V ,t
S C
5
s
V
C C
= 4 0 0 V,
T
j
150C
-
IFAG IPC TD VLS
2
Rev. 2.8 2013-12-05
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 4 00 V ,
I
F
= 7 5 A,
d i
F
/ d t
=1 4 60 A /
s
-
-
-
-
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
C,
V
CC
=400V,
I
C
=75A,
V
GE
=0/15V,
r
G
=5
,
L
=100nH,
C
=39pF
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
IKW75N60T
q
Value
Unit
Symbol
Conditions
min.
-
-
-
-
-
-
-
typ.
33
36
330
35
2.0
2.5
4.5
121
2.4
38.5
921
max.
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
µC
A
A/s
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5 C
V
R
= 4 00 V ,
I
F
= 7 5 A,
d i
F
/ d t
=1 4 60 A /
s
-
-
-
-
182
5.8
56.2
1013
-
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=175
C,
V
CC
=400V,
I
C
=75A,
V
GE
=0/15V,
r
G
=5
,
L
=100nH,
C
=39pF
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
typ.
32
37
363
38
2.9
2.9
5.8
max.
-
-
-
-
-
-
-
Unit
ns
mJ
IFAG IPC TD VLS
3
Rev. 2.8 2013-12-05
TRENCHSTOP™ Series
IKW75N60T
q
200A
I
C
,
COLLECTOR CURRENT
150A
T
C
=80°C
100A
T
C
=110°C
50A
I
c
I
c
0A
10H z
100H z
1kH z
10kH z
100kH z
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
175C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 5)
400W
350W
I
C
,
COLLECTOR CURRENT
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
175C;
V
GE
=0/15V)
120A
P
tot
,
POWER DISSIPATION
300W
250W
200W
150W
100W
50W
0W
25°C
I
C
,
COLLECTOR CURRENT
90A
60A
30A
50°C
75°C
100°C 125°C 150°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
175C)
T
C
,
CASE TEMPERATURE
Figure 4. DC Collector current as a function
of case temperature
(V
GE
15V,
T
j
175C)
IFAG IPC TD VLS
4
Rev. 2.8 2013-12-05
TRENCHSTOP™ Series
IKW75N60T
q
120A
V
GE
=20V
120A
I
C
,
COLLECTOR CURRENT
15V
90A
13V
11V
60A
9V
7V
30A
I
C
,
COLLECTOR CURRENT
V
G E
=20V
15V
90A
13V
11V
60A
9V
7V
30A
0A
0V
1V
2V
3V
0A
0V
1V
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
2.5V
I
C
=150A
80A
I
C
,
COLLECTOR CURRENT
2.0V
I
C
=75A
60A
1.5V
40A
T
J
= 1 7 5 °C
20A
2 5 °C
1.0V
I
C
=37.5A
0.5V
0A
0V
2V
4V
6V
8V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2.8 2013-12-05
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