MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3
| Parameter Name | Attribute value |
| Brand Name | STMicroelectronics |
| Is it Rohs certified? | conform to |
| Parts packaging code | TO-3PF |
| package instruction | ROHS COMPLIANT, TO-3PF, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 180 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 1200 V |
| Maximum drain current (Abs) (ID) | 5 A |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 2.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 20 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| STFW6N120K3 | STW6N120K3 | |
|---|---|---|
| Description | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 |
| Brand Name | STMicroelectronics | STMicroelectronics |
| Is it Rohs certified? | conform to | conform to |
| Parts packaging code | TO-3PF | TO-247 |
| package instruction | ROHS COMPLIANT, TO-3PF, 3 PIN | ROHS COMPLIANT PACKAGE-3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 180 mJ | 180 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 1200 V | 1200 V |
| Maximum drain current (Abs) (ID) | 5 A | 5 A |
| Maximum drain current (ID) | 6 A | 6 A |
| Maximum drain-source on-resistance | 2.4 Ω | 2.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e3 | e3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 20 A | 20 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) - annealed |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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