MOSFET Automotive MOSFET P 38A 150nC D2Pak
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | ROHS COMPLIANT, PLASTIC, D2PAK-3/2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 120 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 38 A |
| Maximum drain current (ID) | 38 A |
| Maximum drain-source on-resistance | 0.06 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 170 W |
| Maximum pulsed drain current (IDM) | 140 A |
| Guideline | AEC-Q101 |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| AUIRF5210STRR | AUIRF5210STRL | AUIRF5210S | |
|---|---|---|---|
| Description | MOSFET Automotive MOSFET P 38A 150nC D2Pak | MOSFET Automotive MOSFET P 38A 150nC D2Pak | MOSFET Automotive MOSFET P 38A 150nC D2Pak |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | Infineon | Infineon | Infineon |
| package instruction | ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Other features | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 120 mJ | 120 mJ | 120 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V |
| Maximum drain current (Abs) (ID) | 38 A | 38 A | 38 A |
| Maximum drain current (ID) | 38 A | 38 A | 38 A |
| Maximum drain-source on-resistance | 0.06 Ω | 0.06 Ω | 0.06 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum power dissipation(Abs) | 170 W | 170 W | 170 W |
| Maximum pulsed drain current (IDM) | 140 A | 140 A | 140 A |
| Guideline | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| surface mount | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| Factory Lead Time | - | 16 weeks | 1 week |
| Humidity sensitivity level | - | 1 | 1 |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
