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GS8342Q36GE-250

Description
36Mb SigmaQuad-II Burst of 4 SRAM
Categorystorage    storage   
File Size870KB,34 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
Download Datasheet Parametric View All

GS8342Q36GE-250 Overview

36Mb SigmaQuad-II Burst of 4 SRAM

GS8342Q36GE-250 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Objectid2078616623
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompli
ECCN code3A991.B.2.B
compound_id6299329
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density37748736 bi
Memory IC TypeSTANDARD SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
Preliminary
GS8342Q08/09/18/36E-300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
• Pin-compatible with present 9Mb and 18Mb and future 72Mb
and 144Mb devices
36Mb SigmaQuad-II
Burst of 2 SRAM
167 MHz–300 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Because Separate I/O SigmaQuad-II B2 RAMs always transfer
data in two packets, A0 is internally set to 0 for the first read or
write transfer, and automatically incremented by 1 for the next
transfer. Because the LSB is tied off internally, the address
field of a SigmaQuad-II B2 RAM is always one address pin
less than the advertised index depth (e.g., the 2M x 18 has a
1024K addressable index).
SigmaQuad™ Family Overview
The GSQ8342Q08/09/18/36E are built in compliance with
the SigmaQuad-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 37,748,736-bit (36Mb)
SRAMs. The GSQ8342Q08/09/18/36E SigmaQuad SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GSQ8342Q08/09/18/36E SigmaQuad-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
Parameter Synopsis
-300
tKHKH
tKHQV
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.02 8/2005
1/34
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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