STPS30M60DJF
High efficiency power Schottky diode
Datasheet
−
production data
Features
■
■
■
■
■
■
A
Very low conduction losses
Low forward voltage drop
Low thermal resistance
High specified avalanche capability
High integration
ECOPACK
®
2 compliant component
K
A
K
K
Description
The STPS30M60DJF is a power Schottky
rectifier, suited for high frequency switch mode
power supply and DC to DC converters.
Packaged in PowerFLAT™, this device is
intended to be used in notebook, game station
and desktop adapters, providing in these
applications a good efficiency at both low and
high load. Its low profile was especially designed
to be used in applications with space-saving
constraints.
A
PowerFLAT 5x6
STPS30M60DJF
A
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
V
F
(typ)
T
j
(max)
Value
30 A
60 V
0.46 V
150 °C
TM: PowerFLAT is a trademark of STMicroelectronics
April 2012
This is information on a product in full production.
Doc ID 023120 Rev 1
1/8
www.st.com
8
Characteristics
STPS30M60DJF
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Absolute ratings (limiting values, anode terminals 1 and 3 short circuited)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ
= 0.5
Surge non repetitive forward current
T
c
= 100 °C
t
p
= 10 ms sinusoidal
Value
60
45
30
250
3500
t
p
< 1 µs, T
j
< 150 °C
I
AR
< 13 A
80
-65 to +175
150
Unit
V
A
A
A
W
V
°C
°C
P
ARM(1)
Repetitive peak avalanche power
V
ARM
T
stg
T
j
Maximum repetitive peak avalanche
voltage
Storage temperature range
Maximum operating junction temperature
(2)
1. More details regarding the avalanche energy measurements and diode validation in the avalanche are
provided in the STMicroelectronics’ application notes AN1768 and AN2025.
2.
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3.
Symbol
R
th(j-c)
Thermal resistance
Parameter
Junction to case
Value
2.0
Unit
°C/W
Table 4.
Symbol
I
R(1)
Static electrical characteristics (anode terminals short circuited)
Parameter
Reverse leakage
current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
R
= V
RRM
Min.
-
-
-
I
F
= 15 A
-
-
I
F
= 30 A
-
Typ.
-
20
-
0.46
-
0.57
Max.
90
50
0.59
0.52
V
0.72
0.67
Unit
µA
mA
V
F(2)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 380 µs,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 0.55 x I
F(AV)
+ 0.004 x I
F2(RMS)
2/8
Doc ID 023120 Rev 1
STPS30M60DJF
Characteristics
Figure 1.
P
F(AV)
(W)
Average forward power dissipation Figure 2.
versus average forward current
35
Average forward current versus
ambient temperature (δ = 0.5)
R
th(j-a)
= R
th(j-c)
30
I
F(AV)
(A)
25
δ
= 0.5
δ
= 0.2
δ
= 0.1
δ
= 0.05
30
δ
=1
25
20
20
15
T
δ
= t
p
/ T
15
10
t
p
10
T
5
5
I
F(AV)
(A)
0
0
5
10
15
20
25
30
35
40
δ
= t
p
/ T
0
0
25
t
p
50
75
100
T
amb
(°C)
125
150
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
P
ARM
(tp)
P
ARM
(1 µs)
1
P
ARM
(Tj)
P
ARM
(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
280
240
200
160
120
80
40
I
M
(A)
1.0
0.9
0.8
0.7
0.6
Z
th(j-c)
/R
th(j-c)
T
c
= 25 °C
T
c
= 75 °C
I
M
t
δ
= 0.5
1.E-02
1.E-01
0.5
0.4
0.3
0.2
0.1
T
c
= 125 °C
Single pulse
t(s)
0.0
0
1.E-03
t
p
(s)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+00
1.E-05
Doc ID 023120 Rev 1
3/8
Characteristics
STPS30M60DJF
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values)
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values)
F = 1 MHz
V
osc
= 30 mV
RMS
T = 25 °C
j
1.E+03
I
R
(mA)
10000
C(pF)
1.E+02
1.E+01
T
j
= 150 °C
T
j
= 125 °C
1.E+00
T
j
= 100 °C
T
j
= 75 °C
T
j
= 50 °C
1000
1.E-01
1.E-02
T
j
= 25 °C
1.E-03
0
5
10
15
20
25
30
35
40
45
50
V
R
(V)
55
60
100
1
10
V
R
(V)
100
Figure 9.
Forward voltage drop versus
forward current
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab
250
100.0
I
FM
(A)
T
j
= 125 °C
(Maximum values)
R
th(j-a)
(°C/W)
epoxy printed board FR4,
copper thickness = 35 µm
200
10.0
T
j
= 125 °C
(Typical values)
150
100
1.0
T
j
= 25 °C
(Maximum values)
50
V
FM
(V)
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
1
2
3
4
5
6
7
8
S
cu
(cm²)
9
10
Figure 11. Reverse safe operating area (t
p
< 1 µs and T
j
< 150 °C)
I
arm
(A)
20
15
10
Varm
5
60
65
70
75
80
85
90
95
100
105
110
4/8
Doc ID 023120 Rev 1
STPS30M60DJF
Package information
2
Package information
●
●
Epoxy meets UL94,V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 5.
PowerFLAT 5x6 dimensions
Dimensions
Ref.
D2
E2
K
b
Millimeters
Min.
Typ.
Max.
1.00
0.05
0.25
0.30
5.20
4.11
1.27
6.15
3.50
0.50
1.275
3.70
0.80
1.575
0.138
0.020
0.050
4.31
0.162
0.50
0.012
Min.
0.031
0.001
Inches
Typ.
Max.
0.039
0.002
0.010
0.020
0.205
0.170
0.050
0.242
0.146
0.031
0.062
A
A1
A2
e
L
0.80
0.02
b
A2
A
A1
D
D
D2
e
E
E
E2
L
K
Figure 12. Footprint (dimensions in mm)
5.35
4.41
0.98
0.95
0.62
1.27
Doc ID 023120 Rev 1
3.86
4.33
6.29
5/8