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NTD4855NT4G

Description
MOSFET NFET 25V 98A 0.0033R DPAK
CategoryDiscrete semiconductor    The transistor   
File Size259KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTD4855NT4G Overview

MOSFET NFET 25V 98A 0.0033R DPAK

NTD4855NT4G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionLEAD FREE, PLASTIC, CASE 369AA-01, DPAK-3
Contacts4
Manufacturer packaging code369AA
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)220 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)98 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)66.7 W
Maximum pulsed drain current (IDM)197 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
NTD4855N
Power MOSFET
Features
25 V, 98 A, Single N-
-Channel, DPAK/IPAK
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-
-Free Devices
http://onsemi.com
V
(BR)DSS
25 V
R
DS(ON)
MAX
4.3 mΩ @ 10 V
6.0 mΩ @ 4.5 V
D
I
D
MAX
98 A
Applications
VCORE Applications
DC--DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current R
θJA
(Note 1)
Power Dissipation
R
θJA
(Note 1)
Continuous Drain
Current R
θJA
(Note 2)
Power Dissipation
R
θJA
(Note 2)
Continuous Drain
Current R
θJC
(Note 1)
Power Dissipation
R
θJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
25
±20
18
14
2.24
14
10.9
1.35
98
76
66.7
197
45
--55 to
+175
56
6
220
W
A
A
°C
A
V/ns
mJ
4
Drain
YWW
48
55NG
W
A
W
A
1 2
3
Unit
V
V
A
G
S
N-
-CHANNEL MOSFET
4
4
1
4
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2 3
1
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
48
55NG
4
Drain
YWW
48
55NG
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 21 A
pk
, L = 1.0 mH, R
G
= 25
Ω)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
2
1 2 3
1 Drain 3
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
Y
WW
4855N
G
= Year
= Work Week
= Device Code
= Pb--Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
June, 2010 - Rev. 3
-
1
Publication Order Number:
NTD4855N/D
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