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2N6517BU

Description
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
CategoryDiscrete semiconductor    The transistor   
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N6517BU Overview

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

2N6517BU Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionCYLINDRICAL, O-PBCY-T3
Manufacturer packaging code135AN
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2N6517BU Related Products

2N6517BU 2N6517CTA_Q 2N6517TA 2N6517CTA 2N6517CBU
Description Bipolar Transistors - BJT NPN Si Transistor Epitaxial Bipolar Transistors - BJT NPN Si Transistor Epitaxial TRANS NPN 350V 0.5A TO-92 TRANS NPN 350V 0.5A TO-92 TRANS NPN 350V 0.5A TO-92
Brand Name ON Semiconductor - ON Semiconductor ON Semiconductor -
Is it lead-free? Lead free - Lead free Lead free -
package instruction CYLINDRICAL, O-PBCY-T3 - CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 -
Manufacturer packaging code 135AN - 135AR 135AR -
Reach Compliance Code compliant - compliant compliant -
ECCN code EAR99 - EAR99 EAR99 -
Factory Lead Time 1 week - 6 weeks 1 week -
Maximum collector current (IC) 0.5 A - 0.5 A 0.5 A -
Collector-emitter maximum voltage 350 V - 350 V 350 V -
Configuration SINGLE Single SINGLE SINGLE -
Minimum DC current gain (hFE) 15 - 15 15 -
JEDEC-95 code TO-92 - TO-92 TO-92 -
JESD-30 code O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 -
JESD-609 code e3 - e3 e3 -
Number of components 1 - 1 1 -
Number of terminals 3 - 3 3 -
Maximum operating temperature 150 °C - 150 °C 150 °C -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND - ROUND ROUND -
Package form CYLINDRICAL - CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN - NPN NPN -
Maximum power dissipation(Abs) 0.625 W - 0.625 W 0.625 W -
Certification status Not Qualified - Not Qualified Not Qualified -
surface mount NO - NO NO -
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) -
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM - BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
Transistor component materials SILICON - SILICON SILICON -
Nominal transition frequency (fT) 40 MHz - 40 MHz 40 MHz -
Base Number Matches 1 - 1 1 -

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