UNISONIC TECHNOLOGIES CO., LTD
HE8550
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC
HE8550
is a low voltage high current small signal PNP
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
PNP SILICON TRANSISTOR
1
3
2
SOT-89
1
SOT-23
1
TO-92
FEATURES
* Collector current up to 1.5A
* Collector-Emitter voltage up to 25 V
* Complimentary to UTC
HE8050
1
TO-92NL
*Pb-free plating product number: HE8550L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
HE8550-x-AB3-R
HE8550L-x-AB3-R
HE8550-x-AE3-R
HE8550L-x-AE3-R
HE8550-x-T92-B
HE8550L-x-T92-B
HE8550-x-T92-K
HE8550L-x-T92-K
HE8550-x-T9N-B
HE8550L-x-T9N-B
HE8550-x-T9N-K
HE8550L-x-T9N-K
HE8550-x-T9N-R
HE8550L-x-T9N-R
Package
SOT-89
SOT-23
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
Pin Assignment
1
2
3
B
C
E
E
B
C
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
Tape Reel
HE8550L-x-AE3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, AE3: SOT-23, T92: TO-92,
T 9N: TO-92NL
(3) x: refer to Classification of h
FE2
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING(For SOT-23 Package)
BA
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QW-R206-031,B
HE8550
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
, unless otherwise specified)
RATINGS
UNIT
Collector-Base Voltage
-40
V
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-6
V
SOT-23
350
mW
Collector Dissipation (Ta=25
℃
)
P
C
SOT-89
0.5
W
TO-92/TO-92NL
1
W
Collector Current
I
C
-1.5
A
Junction Temperature
T
J
+150
℃
Operating Ambient Temperature
T
OPR
-40 ~ +150
℃
Storage Temperature
T
STG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=-100
µ
A, I
E
=0
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=-2mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-100
µ
A, I
C
=0
Collector Cut-Off Current
I
CBO
V
CB
=-35V, I
E
=0
Emitter Cut-Off Current
I
EBO
V
EB
=-6V, I
C
=0
h
FE1
V
CE
=-1V, I
C
=-5mA
DC Current Gain
h
FE2
V
CE
=-1V, I
C
=-100mA
h
FE3
V
CE
=-1V, I
C
=-800mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-800mA, I
B
=-80mA
Base-Emitter Saturation Voltage
V
BE(SAT
) I
C
=-800mA, I
B
=-80mA
Base-Emitter Voltage
V
BE
V
CE
=-1V,I
C
=-10mA
Current Gain Bandwidth Product
f
T
V
CE
=-10V,I
C
=-50mA
Output Capacitance
C
ob
V
CB
=-10V, I
E
=0 f=1MHz
MIN
-40
-25
-6
TYP
MAX
UNIT
V
V
V
nA
nA
-100
-100
45
85
40
170
160
80
-0.28
-0.98
-0.66
190
9.0
500
-0.5
-1.2
-1.0
100
V
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
C
120-200
D
160-300
E
250-500
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QW-R206-031,B
HE8550
TYPICAL CHARACTERISTICS
Static Characteristics
-0.5
Collector Current, I
C
(mA)
3
PNP SILICON TRANSISTOR
DC Current Gain
10
DC Current Gain, h
FE
-0.4
I
B
=-3.0mA
V
CE
=-1V
10
2
-0.3
-0.2
I
B
=-2.5mA
I
B
=-2.0mA
I
B
=-1.5mA
I
B
=-1.0mA
10
1
-0.1
I
B
=-0.5mA
0
-0
-0.4
-0.8 -1.2 -1.6 -2.0
Collector-Emitter Voltage ( V)
10
0 -1
-10
-10
0
-10
1
-10
2
-10
3
Collector Current, I
C
(mA)
-10
3
Collector Current, I
C
(mA)
Base-Emitter on Voltage
-10
Saturation Voltage (mV)
4
Saturation Voltage
I
C
=10*I
B
V
BE(SAT)
V
CE
=-1V
-10
2
-10
3
-10
1
-10
2
V
CE(SAT)
-10
1
-10
-1
-10
0
0
-0.2 -0.4
-0.6
-0.8
Base-Emitter Voltage (V)
-1.0
-10
0
-10
1
-10
2
Collector Current I
C
(mA)
,
-10
3
Current Gain-Bandwidth Product, f
T
(MHz)
Current Gain-Bandwidth Product
10
3
3
Collector Output Capacitance
10 f=1MHz
I
E
=0
10
2
10
2
10
1
Capacitance, C
ob
(pF)
3
V
CE
=-10V
10
1
10
0 0
-10
-10
-10
-10
Collector Current, I
C
(mA)
1
2
10
0 0
-10
-10
1
-10
2
-10
3
Collector-Base Voltage (V)
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QW-R206-031,B
HE8550
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R206-031,B
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