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HER605

Description
6 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

HER605 Overview

6 A, SILICON, RECTIFIER DIODE

HER605 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current300 A
Number of components1
Maximum operating temperature150 °C
Maximum output current6 A
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountNO
HER601
THRU
HER608
6.0 AMPS. High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
6.0 Amperes
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
R-6
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
o
C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.65 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol HER HER HER
Type Number
601 602 603
Maximum Recurrent Peak Reverse Voltage
V
RRM
50 100 200
Maximum RMS Voltage
35 70 140
V
RMS
Maximum DC Blocking Voltage
50 100 200
V
DC
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@T
A
= 55℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 6.0A
Maximum DC Reverse Current
@ T
A
=25℃ at Rated DC Blocking Voltage
@ T
A
=100℃
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
HER HER HER HER HER
Units
604 605 606 607 608
300 400 600 800 1000
210 280 420 560 700
300 400 600 800 1000
6.0
200
V
V
V
A
A
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JA
T
J
1.0
1.3
10
200
1.7
V
uA
uA
nS
pF
℃/W
50
130
30
-65 to +150
-65 to +150
75
85
T
STG
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on PCB.
- 322 -

HER605 Related Products

HER605 HER606
Description 6 A, SILICON, RECTIFIER DIODE 6 A, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code unknow unknow
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1.4 V
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 300 A 275 A
Number of components 1 1
Maximum operating temperature 150 °C 125 °C
Maximum output current 6 A 6 A
Maximum repetitive peak reverse voltage 400 V 600 V
Maximum reverse recovery time 0.05 µs 0.09 µs
surface mount NO NO

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