HLX6256NEF datasheet, PDF - EEWORLD Datasheet

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HLX6256NEF: Description32K x 8 STATIC RAM Low Power SOI; File Size151KB，12 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HLX6256NEF Overview

32K x 8 STATIC RAM Low Power SOI

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Military & Space Products

32K x 8 STATIC RAM—Low Power SOI

FEATURES

RADIATION

• Fabricated with RICMOS

™

IV Silicon on Insulator (SOI)

0.55

µm

Low Power Process

• Total Dose Hardness through 1x10

rad(SiO

)

OTHER

• Read/Write Cycle Times

≤

17 ns (Typical)

≤

25 ns (-55 to 125°C)

HLX6256

• Typical Operating Power <10 mW/MHz

• Neutron Hardness through 1x10 cm

-2

• Asynchronous Operation

• Dynamic and Static Transient Upset Hardness

through 1x10

rad(Si)/s

• Dose Rate Survivability through 1x10

rad(Si)/s

• Single 3.3 V

0.3V Power Supply

• Soft Error Rate of <1x10

• Latchup Free

-10

• JEDEC Standard Low Voltage

CMOS Compatible I/O

upsets/bit-day

• Packaging Options

- 28-Lead Flat Pack (0.500 in. x 0.720 in.)

- 28-Lead DIP, MIL-STD-1835, CDIP2-T28

- 36-Lead Flat Pack (0.630 in. x 0.650 in.)

- Various Multi-Chip Module (MCM) Configurations

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened Static RAM is a high

performance 32,768 word x 8-bit static random access

memory with industry-standard functionality. It is fabri-

cated with Honeywell’s radiation hardened technology,

and is designed for use in low voltage systems operating in

radiation environments. The RAM operates over the full

military temperature range and requires only a single 3.3 V

0.3V power supply. The RAM is compatible with JEDEC

standard low voltage CMOS I/O. Power consumption is

typically less than 10 mW/MHz in operation, and less than

2 mW when de-selected. The RAM read operation is fully

asynchronous, with an associated typical access time of 14

ns at 3.3 V.

Honeywell’s enhanced SOI RICMOS

™

IV (Radiation Insen-

sitive CMOS) technology is radiation hardened through the

use of advanced and proprietary design, layout and pro-

cess hardening techniques. The RICMOS

™

IV low power

process is a SIMOX CMOS technology with a 150 Å gate

oxide and a minimum drawn feature size of 0.7

µm

(0.55

µm

effective gate length—L

eff

). Additional features include

tungsten via plugs, Honeywell’s proprietary SHARP pla-

narization process and a lightly doped drain (LDD) struc-

ture for improved short channel reliability. A 7 transistor

(7T) memory cell is used for superior single event upset

hardening, while three layer metal power bussing and the

low collection volume SIMOX substrate provide improved

dose rate hardening.

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