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HX10M

Description
0.04 A, 1000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size83KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

HX10M Overview

0.04 A, 1000 V, SILICON, SIGNAL DIODE

HX10M Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)10 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current3 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.04 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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