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HYB18T1G160BF-3

Description
1-Gbit Double-Data-Rate-Two SDRAM
Categorystorage    storage   
File Size2MB,74 Pages
ManufacturerQIMONDA
Environmental Compliance
Download Datasheet Parametric View All

HYB18T1G160BF-3 Overview

1-Gbit Double-Data-Rate-Two SDRAM

HYB18T1G160BF-3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQIMONDA
Parts packaging codeBGA
package instructionTFBGA, BGA84,9X19,32
Contacts84
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.45 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)333 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B84
length17 mm
memory density1073741824 bi
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals84
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
organize64MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA84,9X19,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.012 A
Maximum slew rate0.3 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width10 mm
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